丝印：IRF100B201；Package：TO-220；100 V N-Channel MOSFET

Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free, RoHS Compliant, Halogen-Free VDS=100V ID=192A RDS(ON) (at VGS=10V)

文件：844.05 Kbytes 页数：9 Pages

UMW

友台半导体

Brushed Motor drive applications

文件：622.82 Kbytes 页数：12 Pages

IRF

N-Channel MOSFET Transistor

文件：338.47 Kbytes 页数：2 Pages

ISC

无锡固电

100V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装

\n优势:\n• Optimized for broadest availability from distribution partners\n• Product qualification according to JEDEC standard\n• Optimized for 10V gate-drive voltage (called Normal level)\n• Industry standard through-hole power package\n• High-current carrying capability package (upto 195A, die-size ;

Infineon

英飞凌