丝印：IRF7311；Package：SOP-8；30V 2N-Channel Enhancement Mode MOSFET

General Description The is the highest performance trench 2N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability a

文件：2.087889 Mbytes 页数：6 Pages

UMW

友台半导体

丝印：IRF7311；Package：SOP-8；30V 2N-Channel Enhancement Mode MOSFET

General Description 2N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and The is the highest performance trench Product requirement with full function reliability a

文件：2.21333 Mbytes 页数：6 Pages

EVVOSEMI

翊欧

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

文件：209.23 Kbytes 页数：7 Pages

IRF

Ultra Low On-Resistance

文件：677.73 Kbytes 页数：7 Pages

KERSEMI

丝印：IRF7311；Package：SOP-8；30V 2N-Channel Enhancement Mode MOSFET

General Description The is the highest performance trench 2N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability a

文件：2.087889 Mbytes 页数：6 Pages

UMW

友台半导体

20V 双 N 通道 HEXFET Power MOSFET, 采用 SO-8 封装

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 动态的dv/dt额定值\n• 快速开关\n• 双 N 通道 MOSFET;

Infineon

英飞凌

HEXFET짰Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

文件：1.97488 Mbytes 页数：7 Pages

IRF

Generation V Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

文件：214.79 Kbytes 页数：7 Pages

IRF

GENERATION V TECHNOLOGY

文件：1.97878 Mbytes 页数：7 Pages

IRF

GENERATION V TECHNOLOGY

文件：1.97878 Mbytes 页数：7 Pages

IRF