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IRF221

N-Channel Power MOSFETs, 7A, 150-200V

N-ChannelPowerMOSFETs7A150-200V

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRF221

4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

Intersil

Intersil Corporation

IRF221

Nanosecond Switching Speeds

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

IRF221

N-CHANNEL POWER MOSFETS

FEATURES •LowRDs

SamsungSamsung semiconductor

三星三星半导体

IRF222

N-CHANNEL POWER MOSFETS

FEATURES •LowRDs

SamsungSamsung semiconductor

三星三星半导体

IRF222

Nanosecond Switching Speeds

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

IRF222

4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

Intersil

Intersil Corporation

IRF222

N-Channel Power MOSFETs, 7A, 150-200V

N-ChannelPowerMOSFETs7A150-200V

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRF223

N-Channel Power MOSFETs, 7A, 150-200V

N-ChannelPowerMOSFETs7A150-200V

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRF223

4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

Intersil

Intersil Corporation

详细参数

  • 型号:

    IRF

  • 制造商:

    VISHAY

  • 制造商全称:

    Vishay Siliconix

  • 功能描述:

    Inductors Epoxy Conformal Coated Uniform Roll Coated

供应商型号品牌批号封装库存备注价格
IR
22+
263
6000
终端可免费供样,支持BOM配单
询价
IR
23+
263
8000
专注配单,只做原装进口现货
询价
IR
23+
263
8000
专注配单,只做原装进口现货
询价
IR
23+
263
7000
询价
5002
24+
SOP
6980
原装现货,可开13%税票
询价
IR
17+
DIP-4
6200
100%原装正品现货
询价
IRF
4000一盘
13+
0
SOP8
询价
Fairchi
24+
DXPAK
6000
进口原装正品假一赔十,货期7-10天
询价
GESS
23+
NA
39960
只做进口原装,终端工厂免费送样
询价
IR
1725+
?
7500
只做原装进口,假一罚十
询价
更多IRF供应商 更新时间2025-6-29 14:00:00