IRF153

HIGH VOLTAGE POWER MOSFET DIE

FEATURES: ●Fastswitchingtimes ●LOWRDS(on)HDMOS™process ●Ruggedpolyslllcongatecellstructure ●Excellenthighvoltagestability ●Lowinputcapacitance ●Improvedhightemperaturereliability APPLICATIONS ●Switchingpowersupplies ●Motorcontrols ●AudioAmplifiers ●Inver

IRF153

N-CHANNEL POWER MOSFETS

FEATURES ●LOWRDS(on) ●ImprovedInductiveruggedness ●Fastswitchingtimes ●Ruggedpolyslllcongatecellstructure ●Lowinputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability ●TO-3package(Highcurrent)

IRF1607

N-Channel MOSFET Transistor

•DESCRITION •reliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤7.5mΩ •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

IRF1607

Power MOSFET(Vdss=75V, Rds(on)=0.0075ohm, Id=142A??

Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET®PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemp

IRF1607PBF

AUTOMOTIVE MOSFET

Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET®PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemp

IRF1704

Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A??

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®powerMOSFEThasa200°CmaxoperatingtemperaturewithaStripePlanardesignthatutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFET®

IRF1730G

Power MOSFET(Vdss=400V, Rds(on)=1.0ohm, Id=3.7A)

HEXFET®PowerMOSFET

IRF1740G

HEXFET® Power MOSFET

®IsolatedPackage ®HighVoitageIsolation=2.5KVRMS® ®SinktoLeadCreepageDist.=4.8mm ®Dynamicdv/dtRating ®LowThermalResistance Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesigner withthebestcombinationoffastswitching,ruggedizeddev

IRF1840G

Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=4.6A)

IRF1840G->CorrectPartumberIRFI840G 1.IsolatedPackage 2.HighVoltageIsolation=2.5VKRMS 3.SinktoLeadCreepageDist=4.8mm 4.LowThermalResistance

IRF1840G

HEXFET짰 Power MOSFET

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