IRF151

High Power,High Speed Applications

DESCRIPTION •DrainCurrentID=40A@TC=25℃ •DrainSourceVoltage-:VDSS=60V(Min) •StaticDrain-SourceOn-Resistance:RDS(on)=0.055Ω(Max) •HighPower,HighSpeedApplications APPLICATIONS •Switchingpowersupplies •UPS •Motorcontrols •Highenergypulsecircuits.

IRF151

HIGH VOLTAGE POWER MOSFET DIE

FEATURES: ●Fastswitchingtimes ●LOWRDS(on)HDMOS™process ●Ruggedpolyslllcongatecellstructure ●Excellenthighvoltagestability ●Lowinputcapacitance ●Improvedhightemperaturereliability APPLICATIONS ●Switchingpowersupplies ●Motorcontrols ●AudioAmplifiers ●Inver

IRF151

N-CHANNEL POWER MOSFETS

FEATURES ●LOWRDS(on) ●ImprovedInductiveruggedness ●Fastswitchingtimes ●Ruggedpolyslllcongatecellstructure ●Lowinputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability ●TO-3package(Highcurrent)

IRF151

DUAL MOSFET DRIVER

•DualCircuitsCapableofDriving High-CapacitanceLoadsatHighSpeeds •OutputSupplyVoltageRangeupto24V •LowStandbyPowerDissipation description TheSN75372isadualNANDgateinterface circuitdesignedtodrivepowerMOSFETsfrom TTLinputs.Itprovideshighcurrentandvol

IRF152

N-CHANNEL POWER MOSFETS

FEATURES ●LOWRDS(on) ●ImprovedInductiveruggedness ●Fastswitchingtimes ●Ruggedpolyslllcongatecellstructure ●Lowinputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability ●TO-3package(Highcurrent)

IRF152

HIGH VOLTAGE POWER MOSFET DIE

FEATURES: ●Fastswitchingtimes ●LOWRDS(on)HDMOS™process ●Ruggedpolyslllcongatecellstructure ●Excellenthighvoltagestability ●Lowinputcapacitance ●Improvedhightemperaturereliability APPLICATIONS ●Switchingpowersupplies ●Motorcontrols ●AudioAmplifiers ●Inver

IRF152

N-CHANNEL POWER MOSFETS

FEATURES ●LOWRDS(on) ●ImprovedInductiveruggedness ●Fastswitchingtimes ●Ruggedpolyslllcongatecellstructure ●Lowinputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability ●TO-3package(Highcurrent)

IRF152

N-Channel Power MOSFETs, 40 A, 60 V/100 V

N-ChannelPowerMOSFET40A,60V/100V

IRF1520G

HEXFET POWER MOSFET

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220Fullpakeliminatestheneedforadditionalinsulatinghardwareincommercial-industri

IRF153

N-Channel Power MOSFETs, 40 A, 60 V/100 V

N-ChannelPowerMOSFET40A,60V/100V