丝印：IRF150P220；Package：PG-TO247-3；StrongIRFETª

Features • Very low RDS(on) • Excellent gate charge x RDS(on) (FOM) • Optimized Qrr • 175°C operating temperature • Product validation according to JEDEC standard • Optimized for broadest availability from distribution partners

文件：1.14547 Mbytes 页数：11 Pages

INFINEON

英飞凌

StrongIRFETª

Features • Very low RDS(on) • Excellent gate charge x RDS(on) (FOM) • Optimized Qrr • 175°C operating temperature • Product validation according to JEDEC standard • Optimized for broadest availability from distribution partners

文件：1.14547 Mbytes 页数：11 Pages

INFINEON

英飞凌

DUAL MOSFET DRIVER

• Dual Circuits Capable of Driving High-Capacitance Loads at High Speeds • Output Supply Voltage Range up to 24 V • Low Standby Power Dissipation description The SN75372 is a dual NAND gate interface circuit designed to drive power MOSFETs from TTL inputs. It provides high current and vol

文件：656.7 Kbytes 页数：21 Pages

TI

德州仪器

HIGH VOLTAGE POWER MOSFET DIE

FEATURES: ● Fast switching times ● LOW RDS(on) HDMOS™ process ● Rugged polyslllcon gate cell structure ● Excellent high voltage stability ● Low input capacitance ● Improved high temperature reliability APPLICATIONS ● Switching power supplies ● Motor controls ● Audio Amplifiers ● Inver

文件：44.9 Kbytes 页数：1 Pages

IXYS

艾赛斯

N-Channel Power MOSFETs, 40 A, 60 V/100 V

N-Channel Power MOSFET 40A, 60 V/100 V

文件：125.37 Kbytes 页数：4 Pages

FAIRCHILD

仙童半导体

High Power,High Speed Applications

DESCRIPTION • Drain Current ID=40A@ TC=25℃ • Drain Source Voltage- : VDSS= 60V(Min) • Static Drain-Source On-Resistance : RDS(on) =0.055Ω(Max) • High Power,High Speed Applications APPLICATIONS • Switching power supplies • UPS • Motor controls • High energy pulse circuits.

文件：48.19 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL POWER MOSFETS

FEATURES ● LOW RDS(on) ● Improved Inductive ruggedness ● Fast switching times ● Rugged polyslllcon gate cell structure ● Low input capacitance ● Extended safe operating area ● Improved high temperature reliability ● TO-3 package(High current)

文件：210.79 Kbytes 页数：5 Pages

SAMSUNG

三星

N-CHANNEL POWER MOSFETS

FEATURES ● LOW RDS(on) ● Improved Inductive ruggedness ● Fast switching times ● Rugged polyslllcon gate cell structure ● Low input capacitance ● Extended safe operating area ● Improved high temperature reliability ● TO-3 package(High current)

文件：136.47 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-Channel Power MOSFETs, 40 A, 60 V/100 V

N-Channel Power MOSFET 40A, 60 V/100 V

文件：125.37 Kbytes 页数：4 Pages

FAIRCHILD

仙童半导体

HIGH VOLTAGE POWER MOSFET DIE

FEATURES: ● Fast switching times ● LOW RDS(on) HDMOS™ process ● Rugged polyslllcon gate cell structure ● Excellent high voltage stability ● Low input capacitance ● Improved high temperature reliability APPLICATIONS ● Switching power supplies ● Motor controls ● Audio Amplifiers ● Inver

文件：44.9 Kbytes 页数：1 Pages

IXYS

艾赛斯