N-Channel Power MOSFETs, 27 A, 60-100V

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FAIRCHILD

仙童半导体

N-CHANNEL POWER MOSFETS

N-CHANNEL POWER MOSFETS

文件：211.32 Kbytes 页数：5 Pages

SAMSUNG

三星

N-Channel Power MOSFETs, 27 A, 60-100V

文件：146.34 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

N-Channel Power MOSFETs, 27 A, 60-100 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VGS Rated at ±20 V ●

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-Channel Power MOSFET

DESCRIPTION They are designed for use in applications such as switched mode power supplies, DC to DC converters, motor control circuits, UPS and general purpose switching applications. The Nell IRF150 is a three-terminal silicon device with current conduction capability of 42A, fast switching sp

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NELLSEMI

尼尔半导体

N-Channel Power MOSFETs, 40 A, 60 V/100 V

N-Channel Power MOSFET 40A, 60 V/100 V

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FAIRCHILD

仙童半导体

N-CHANNEL POWER MOSFETS

FEATURES ● LOW RDS(on) ● Improved Inductive ruggedness ● Fast switching times ● Rugged polyslllcon gate cell structure ● Low input capacitance ● Extended safe operating area ● Improved high temperature reliability ● TO-3 package(High current)

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SAMSUNG

三星

TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.055ohm, Id= 38A)

The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and dio

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IRF

High Power,High Speed Applications

DESCRIPTION • Drain Current ID=40A@ TC=25℃ • Drain Source Voltage- : VDSS= 100V(Min) • Static Drain-Source On-Resistance : RDS(on) =0.055Ω(Max) • High Power,High Speed Applications APPLICATIONS • Switching power supplies • UPS • Motor controls • High energy pulse circuits.

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ISC

无锡固电

N-CHANNEL POWER MOSFETS

FEATURES ● LOW RDS(on) ● Improved Inductive ruggedness ● Fast switching times ● Rugged polyslllcon gate cell structure ● Low input capacitance ● Extended safe operating area ● Improved high temperature reliability ● TO-3 package(High current)

文件：136.47 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司