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型号	下载订购	功能描述	制造商上传企业	LOGO
IRF1404ZPBF	文件：329.6 Kbytes Page：12 Pages	AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature 文件：329.6 Kbytes 页数：12 Pages	IRF	IRF
IRF1404ZPBF	文件：307.88 Kbytes Page：12 Pages	Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature 文件：307.88 Kbytes 页数：12 Pages	IRF	IRF
IRF1404ZS	文件：4.6855 Mbytes Page：12 Pages	AUTOMOTIVE MOSFET Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro 文件：4.6855 Mbytes 页数：12 Pages	KERSEMI	KERSEMI
IRF1404ZS	文件：306.06 Kbytes Page：12 Pages	Advanced Process Technology Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：306.06 Kbytes 页数：12 Pages	IRF	IRF
IRF1404ZS_L	文件：4.6855 Mbytes Page：12 Pages	AUTOMOTIVE MOSFET Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro 文件：4.6855 Mbytes 页数：12 Pages	KERSEMI	KERSEMI
IRF1404ZSPBF	文件：329.6 Kbytes Page：12 Pages	AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature 文件：329.6 Kbytes 页数：12 Pages	IRF	IRF
IRF1404ZSPBF	文件：307.88 Kbytes Page：12 Pages	Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature 文件：307.88 Kbytes 页数：12 Pages	IRF	IRF
IRF1404ZSTRLPBF	文件：307.88 Kbytes Page：12 Pages	Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature 文件：307.88 Kbytes 页数：12 Pages	IRF	IRF
IRF1405	文件：3.36263 Mbytes Page：9 Pages	Electric Power Steering (EPS) Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temp 文件：3.36263 Mbytes 页数：9 Pages	KERSEMI	KERSEMI
IRF1405	文件：116.43 Kbytes Page：9 Pages	Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A?? Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating tempe 文件：116.43 Kbytes 页数：9 Pages	IRF	IRF

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技术参数

OPN：
IRF100B201
Qualification：
Non-Automotive
Package name：
TO220
VDS max：
100 V
RDS (on) @10V max：
4.2 mΩ
ID @25°C max：
192 A
QG typ @10V：
170 nC
Polarity：
N
VGS(th) min：
2 V
VGS(th) max：
4 V
VGS(th)：
3 V
Technology：
IR MOSFET™

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市河锋鑫科技有限公司	IRF	IR	22+	263	6000	终端可免费供样,支持BOM配单	询价
深圳市安富世纪电子有限公司	IRF	IR	23+	263	8000	专注配单,只做原装进口现货	询价
天津市博通航睿技术有限公司	IRF	IR	23+	263	7000		询价
深圳市欧亚佳电子有限公司	IRF7301PbF	IR	20+	SOP8	11520	特价全新原装公司现货	询价
深圳市福安瓯科技有限公司	IRF7103TRPBF	IOR	25+	SOP8	3000	强调现货,随时查询!	询价
艾睿（深圳）半导体有限公司	IRFHM792TRPBF	Infineon(英飞凌)	2447	PQFN3.3X3.38L	315000	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市宝芯创电子有限公司	IRF530	IR	1516+	TO-220	30449	进口原管现货/50	询价
深圳市威雅利发展有限公司	IRFZ9Z24NPBF	IR	09+	TO-220	16	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市昊创电子有限公司	IRF7316	IR	1902+	SOP-8	2734	代理品牌	询价
深圳市亿智腾科技有限公司	IRF4905	IR	24+	TO-220	6430	原装现货/欢迎来电咨询	询价

更多IRF供应商更新时间2026-1-17 14:00:00

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