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IRF1405LPBF

AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 5.3m廓 , ID = 131A )

Description StripePlanardesignofHEXFET®PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveav

IRF

International Rectifier

IRF1405PBF

AUTOMOTIVE MOSFET

VDSS=55V RDS(on)=5.3mΩ ID=169A Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOS

IRF

International Rectifier

IRF1405S

Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A??

Description StripePlanardesignofHEXFET®PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveav

IRF

International Rectifier

IRF1405S

AUTOMOTIVE MOSFET

Description StripePlanardesignofHEXFET®PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveav

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1405SPBF

AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 5.3m廓 , ID = 131A )

Description StripePlanardesignofHEXFET®PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveav

IRF

International Rectifier

IRF1405Z

AUTOMOTIVE MOSFET

VDSS=55V RDS(on)=4.9mΩ ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemp

IRF

International Rectifier

IRF1405ZL

AUTOMOTIVE MOSFET

VDSS=55V RDS(on)=4.9mΩ ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemp

IRF

International Rectifier

IRF1405ZL-7P

AUTOMOTIVE MOSFET

VDSS=55V RDS(on)=4.9mΩ ID=120A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtem

IRF

International Rectifier

IRF1405ZL-7PPBF

HEXFET짰 Power MOSFET ( VDSS = 55V , RDS(on) = 4.9m廓 , ID = 120A )

VDSS=55V RDS(on)=4.9mΩ ID=120A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtem

IRF

International Rectifier

IRF1405ZLPBF

AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 4.9m廓 , ID = 75A )

VDSS=55V RDS(on)=4.9mΩ ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemp

IRF

International Rectifier

详细参数

  • 型号:

    IRF

  • 制造商:

    VISHAY

  • 制造商全称:

    Vishay Siliconix

  • 功能描述:

    Inductors Epoxy Conformal Coated Uniform Roll Coated

供应商型号品牌批号封装库存备注价格
IR
22+
263
6000
终端可免费供样,支持BOM配单
询价
IR
23+
263
8000
专注配单,只做原装进口现货
询价
IR
23+
263
8000
专注配单,只做原装进口现货
询价
IR
23+
263
7000
询价
IRF
24+
SOP-8P
400
现货
询价
5002
24+
SOP
6980
原装现货,可开13%税票
询价
IR-韩国产
2020+
TO-220
16402
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
0
询价
IR
1725+
?
7500
只做原装进口,假一罚十
询价
Fairchi
24+
DXPAK
6000
进口原装正品假一赔十,货期7-10天
询价
更多IRF供应商 更新时间2025-6-29 14:00:00