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型号	下载订购	功能描述	制造商上传企业	LOGO
IRF1405L	文件：154.79 Kbytes Page：11 Pages	Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A?? Description Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive av 文件：154.79 Kbytes 页数：11 Pages	IRF	IRF
IRF1405L	文件：3.92361 Mbytes Page：11 Pages	AUTOMOTIVE MOSFET Description Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive av 文件：3.92361 Mbytes 页数：11 Pages	KERSEMI	KERSEMI
IRF1405LPBF	文件：240.27 Kbytes Page：12 Pages	AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 5.3m廓 , ID = 131A ) Description Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive av 文件：240.27 Kbytes 页数：12 Pages	IRF	IRF
IRF1405PBF	文件：207.62 Kbytes Page：9 Pages	AUTOMOTIVE MOSFET VDSS = 55V RDS(on) = 5.3mΩ ID = 169A Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOS 文件：207.62 Kbytes 页数：9 Pages	IRF	IRF
IRF1405S	文件：154.79 Kbytes Page：11 Pages	Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A?? Description Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive av 文件：154.79 Kbytes 页数：11 Pages	IRF	IRF
IRF1405S	文件：3.92361 Mbytes Page：11 Pages	AUTOMOTIVE MOSFET Description Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive av 文件：3.92361 Mbytes 页数：11 Pages	KERSEMI	KERSEMI
IRF1405SPBF	文件：240.27 Kbytes Page：12 Pages	AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 5.3m廓 , ID = 131A ) Description Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive av 文件：240.27 Kbytes 页数：12 Pages	IRF	IRF
IRF1405Z	文件：291.64 Kbytes Page：12 Pages	AUTOMOTIVE MOSFET VDSS = 55V RDS(on) = 4.9mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temp 文件：291.64 Kbytes 页数：12 Pages	IRF	IRF
IRF1405ZL	文件：291.64 Kbytes Page：12 Pages	AUTOMOTIVE MOSFET VDSS = 55V RDS(on) = 4.9mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temp 文件：291.64 Kbytes 页数：12 Pages	IRF	IRF
IRF1405ZL-7P	文件：688.27 Kbytes Page：11 Pages	AUTOMOTIVE MOSFET VDSS = 55V RDS(on) = 4.9mΩ ID = 120A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating tem 文件：688.27 Kbytes 页数：11 Pages	IRF	IRF

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技术参数

OPN：
IRF100B201
Qualification：
Non-Automotive
Package name：
TO220
VDS max：
100 V
RDS (on) @10V max：
4.2 mΩ
ID @25°C max：
192 A
QG typ @10V：
170 nC
Polarity：
N
VGS(th) min：
2 V
VGS(th) max：
4 V
VGS(th)：
3 V
Technology：
IR MOSFET™

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市河锋鑫科技有限公司	IRF	IR	22+	263	6000	终端可免费供样,支持BOM配单	询价
深圳市安富世纪电子有限公司	IRF	IR	23+	263	8000	专注配单,只做原装进口现货	询价
天津市博通航睿技术有限公司	IRF	IR	23+	263	7000		询价
深圳市欧亚佳电子有限公司	IRF7301PbF	IR	20+	SOP8	11520	特价全新原装公司现货	询价
深圳市赛芯源科技有限公司	IRF3207PBF	INFINEON/英飞凌	2021+	TO-220	55000	原装正品现货,诚信经营。假一罚十	询价
深圳市卓越微芯电子有限公司	IRFB4110PBF	IR-韩国产	25+	TO-220	16402	百分百原装正品真实公司现货库存本公司只做原装可	询价
艾睿（深圳）半导体有限公司	IRFHM792TRPBF	Infineon(英飞凌)	2447	PQFN3.3X3.38L	315000	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市金芯阳科技有限公司	IRFR3710Z	IR	24+	D-PAK	4000		询价
深圳市湘达电子科技有限公司	IRFM240其他被动元件	IR	2022+		45	只做原装,价格优惠,长期供货。	询价
深圳市威雅利发展有限公司	IRFZ9Z24NPBF	IR	09+	TO-220	16	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价

更多IRF供应商更新时间2026-1-17 14:00:00

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