Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A??

Description Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive av

文件：154.79 Kbytes 页数：11 Pages

IRF

AUTOMOTIVE MOSFET

Description Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive av

文件：3.92361 Mbytes 页数：11 Pages

KERSEMI

丝印：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

文件：263.54 Kbytes 页数：2 Pages

ISC

无锡固电

AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 5.3m廓 , ID = 131A )

Description Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive av

文件：240.27 Kbytes 页数：12 Pages

IRF

Advanced Process Technology

文件：313.75 Kbytes 页数：11 Pages

VishayVishay Siliconix

威世

Advanced Process Technology

文件：313.75 Kbytes 页数：11 Pages

IRF

Advanced Process Technology

文件：313.75 Kbytes 页数：11 Pages

IRF

55V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度;

Infineon

英飞凌