Advanced Process Technology

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VISHAYVishay Siliconix

威世威世科技公司

AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 5.3m廓 , ID = 131A )

Description Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive av

文件：240.27 Kbytes 页数：12 Pages

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Advanced Process Technology

文件：313.75 Kbytes 页数：11 Pages

IRF

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 4.9mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temp

文件：291.64 Kbytes 页数：12 Pages

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