40A, 100V, 0.055 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

文件：57.97 Kbytes 页数：7 Pages

INTERSIL

HIGH VOLTAGE POWER MOSFET DIE

FEATURES: ● Fast switching times ● LOW RDS(on) HDMOS™ process ● Rugged polyslllcon gate cell structure ● Excellent high voltage stability ● Low input capacitance ● Improved high temperature reliability APPLICATIONS ● Switching power supplies ● Motor controls ● Audio Amplifiers ● Inver

文件：44.9 Kbytes 页数：1 Pages

IXYS

艾赛斯

N-Channel Power MOSFETs, 40 A, 60 V/100 V

N-Channel Power MOSFET 40A, 60 V/100 V

文件：125.37 Kbytes 页数：4 Pages

FAIRCHILD

仙童半导体

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature,

文件：552.76 Kbytes 页数：9 Pages

IRF

HEXFET Power MOSFET

Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temp

文件：659.63 Kbytes 页数：11 Pages

IRF

HEXFET Power MOSFET

Description This Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetiti

文件：253.75 Kbytes 页数：11 Pages

IRF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fas

文件：164.88 Kbytes 页数：9 Pages

IRF

HEXFET Power MOSFET

Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temp

文件：659.63 Kbytes 页数：11 Pages

IRF

HEXFET Power MOSFET

Description This Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetiti

文件：253.75 Kbytes 页数：11 Pages

IRF

丝印：M115；Package：MG-WDSON-5；MOSFET OptiMOS™5, 150 V

Features Lead free, ultra thin double sided cooling package Excellent gate charge x Ros(on) product (FOM) Very low on -resistance Ros(on) N-channel normal level 100 avalanche tested

文件：1.74566 Mbytes 页数：14 Pages

INFINEON

英飞凌