HEXFET Power MOSFET

Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temp

文件：659.63 Kbytes 页数：11 Pages

IRF

HEXFET Power MOSFET

Description This Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetiti

文件：253.75 Kbytes 页数：11 Pages

IRF

Advanced Process Technology

文件：336.52 Kbytes 页数：11 Pages

IRF

Advanced Process Technology

Infineon

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