AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

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IRF

AUTOMOTIVE MOSFET

Infineon

英飞凌

N-Channel IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)=3.0V（Max）@IC= 100A · Optimized for Low Conduction and Switching Losses · Square RBSOA APPLICATIONS · UPS · Motor Drives · SMPS

文件：289.64 Kbytes 页数：2 Pages

ISC

无锡固电

16-Channel Operation and Data Capture in VGA Mode or CW Doppler Mode

文件：125.52 Kbytes 页数：2 Pages

Maxim

美信

16-Channel Operation and Data Capture in VGA Mode or CW Doppler Mode

文件：125.52 Kbytes 页数：2 Pages

Maxim

美信