HEXFET TRANSISTORS

250V 1.1 ohm HEXFET

文件：398.88 Kbytes 页数：6 Pages

IRF

High Speed Applications

文件：48.33 Kbytes 页数：2 Pages

ISC

无锡固电

HEXFET TRANSISTORS

Infineon

英飞凌

Power MOSFET(Vdss=250V, Rds(on)=1.1ohm, Id=0.63A)

VDSS = 250V RDS(on) = 1.1Ω ID = 0.63A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The 4-pin DIP package is a low-cost machine-insertable ca

文件：467.81 Kbytes 页数：8 Pages

IRF

Power MOSFET

VDS (V) 250 RDS(on) (Ω) VGS = 10 V 1.1 Qg (Max.) (nC) 14 Qgs (nC) 2.7 Qgd (nC) 7.8 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness

文件：1.11815 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • For automatic Insertion • End stackable • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third gene

文件：410.25 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司