型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
IRF231 | N-Channel Power MOSFETs, 12A, 150-200 V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VQS Rated at ±20 V 文件:177.14 Kbytes 页数:6 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | |
IRF231 | N-CHANNEL POWER MOSFETS FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (Standard) 文件:212.01 Kbytes 页数:5 Pages | Samsung 三星 | Samsung | |
IRF231 | 8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica 文件:69.65 Kbytes 页数:7 Pages | Intersil | Intersil | |
IRF231 | N-Channel Power MOSFETs, 12 A, 150-200 V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VQS Rated at ±20 V ● 文件:106.61 Kbytes 页数:3 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | NJSEMI | |
IRF231 | N-Channel Power MOSFETs, 12 A, 150-200 V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VQS Rated at ±20 V ● 文件:106.61 Kbytes 页数:3 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | NJSEMI | |
IRF231 | N-Channel Power Mosfets 文件:155.57 Kbytes 页数:6 Pages | ARTSCHIP | ARTSCHIP | |
IRF231 | High Power,High Speed Applications 文件:48.2 Kbytes 页数:2 Pages | ISC 无锡固电 | ISC | |
Trans MOSFET N-CH 150V 9A 3-Pin(2+Tab) TO-3 | NJS | NJS |
技术参数
- Maximum Power Dissipation:
73000mW
- Maximum Drain Source Voltage:
150V
- Maximum Continuous Drain Current:
9A
- Configuration:
Single
- Channel Type:
N
- Category:
Power MOSFET
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
24+ |
TO-3 |
10000 |
询价 | |||
IR |
2015+ |
TO-3(铁帽) |
19889 |
一级代理原装现货,特价热卖! |
询价 | ||
UNMARKED |
新 |
17 |
全新原装 货期两周 |
询价 | |||
IR |
专业铁帽 |
TO-3 |
67500 |
铁帽原装主营-可开原型号增税票 |
询价 | ||
MOT |
8639 |
52 |
公司优势库存 热卖中! |
询价 | |||
IR |
22+ |
TO-3 |
6000 |
终端可免费供样,支持BOM配单 |
询价 | ||
IR |
23+ |
TO-3 |
52726 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
询价 | ||
IR |
23+ |
TO-3 |
8000 |
专注配单,只做原装进口现货 |
询价 | ||
IR |
23+ |
TO-3 |
7000 |
询价 | |||
24+ |
N/A |
82000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 |
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