首页 >IRF231>规格书列表

型号下载 订购功能描述制造商 上传企业LOGO

IRF231

N-Channel Power MOSFETs, 12A, 150-200 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VQS Rated at ±20 V

文件:177.14 Kbytes 页数:6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRF231

N-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (Standard)

文件:212.01 Kbytes 页数:5 Pages

Samsung

三星

IRF231

8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica

文件:69.65 Kbytes 页数:7 Pages

Intersil

IRF231

N-Channel Power MOSFETs, 12 A, 150-200 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VQS Rated at ±20 V ●

文件:106.61 Kbytes 页数:3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRF231

N-Channel Power MOSFETs, 12 A, 150-200 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VQS Rated at ±20 V ●

文件:106.61 Kbytes 页数:3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRF231

N-Channel Power Mosfets

文件:155.57 Kbytes 页数:6 Pages

ARTSCHIP

IRF231

High Power,High Speed Applications

文件:48.2 Kbytes 页数:2 Pages

ISC

无锡固电

IRF231R

Trans MOSFET N-CH 150V 9A 3-Pin(2+Tab) TO-3

NJS

技术参数

  • Maximum Power Dissipation:

    73000mW

  • Maximum Drain Source Voltage:

    150V

  • Maximum Continuous Drain Current:

    9A

  • Configuration:

    Single

  • Channel Type:

    N

  • Category:

    Power MOSFET

供应商型号品牌批号封装库存备注价格
IR
24+
TO-3
10000
询价
IR
2015+
TO-3(铁帽)
19889
一级代理原装现货,特价热卖!
询价
UNMARKED
17
全新原装 货期两周
询价
IR
专业铁帽
TO-3
67500
铁帽原装主营-可开原型号增税票
询价
MOT
8639
52
公司优势库存 热卖中!
询价
IR
22+
TO-3
6000
终端可免费供样,支持BOM配单
询价
IR
23+
TO-3
52726
##公司主营品牌长期供应100%原装现货可含税提供技术
询价
IR
23+
TO-3
8000
专注配单,只做原装进口现货
询价
IR
23+
TO-3
7000
询价
24+
N/A
82000
一级代理-主营优势-实惠价格-不悔选择
询价
更多IRF231供应商 更新时间2025-10-4 14:31:00