8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica

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Intersil

Nanosecond Switching speeds

文件：48.4 Kbytes 页数：2 Pages

ISC

无锡固电

STANDARD RECOVERY DIODES

文件：328.08 Kbytes 页数：12 Pages

IRF

STANDARD RECOVERY DIODES

Features ■ High Voltage ■ Electrically Isolated by DBC Ceramic ( Al2O3) ■ 3500 VRMS Isolating Voltage ■ Industrial Standard Package ■ High Surge Capability ■ Glass Passivated Chips ■ Modules uses High Voltage Power diodes in four Basic Configurations ■ Simple Mounting ■ UL E78996 approved

文件：325.08 Kbytes 页数：12 Pages

IRF

Power Module 230 Amp

文件：262.26 Kbytes 页数：1 Pages

TEL

东电电子