Power MOSFET(Vdss=20V)

Description These N-Channel HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applicati

文件：107.28 Kbytes 页数：9 Pages

IRF

Power MOSFET(Vdss=20V)

Infineon

英飞凌

HEXFET Power MOSFET

Description These N-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applicati

文件：134.34 Kbytes 页数：9 Pages

IRF

Ultra Low On-Resistance

Description These N-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applicati

文件：139.79 Kbytes 页数：9 Pages

IRF

N-Channel Enhancement Mode Power MOSFET

Features  VDS= 20V, ID= 12 A RDS(ON)

文件：1.28434 Mbytes 页数：5 Pages

BYCHIP

百域芯