AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features to this design are a 175°C junction operating temperature, fast switching speed and im

文件：224.58 Kbytes 页数：11 Pages

IRF

HEXFET짰 Power MOSFET ( VDSS = 40V , RDS(on) = 3.6m廓 , ID = 170A )

Description This HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features

文件：256.45 Kbytes 页数：12 Pages

IRF

HEXFET® Power MOSFET ( VDSS = 40V , RDS(on) = 3.6mΩ , ID = 170A )

Infineon

英飞凌

Advanced Process Technology

文件：263.64 Kbytes 页数：9 Pages

IRF

HEXFET짰 Power MOSFET

文件：263.64 Kbytes 页数：9 Pages

IRF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features to this design are a 175°C junction operating temperature, fast switching speed and im

文件：224.58 Kbytes 页数：11 Pages

IRF