| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IRF220 | N-Channel Power MOSFETs, 7A, 150-200V N-Channel Power MOSFETs 7A 150-200V 文件:165.53 Kbytes 页数:5 Pages | Fairchild 仙童半导体 | Fairchild | |
IRF220 | N-CHANNEL POWER MOSFETS FEATURES • Low RDs 文件:209.79 Kbytes 页数:5 Pages | Samsung 三星 | Samsung | |
IRF220 | 4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica 文件:68.86 Kbytes 页数:7 Pages | Intersil | Intersil | |
IRF220 | Nanosecond Switching Speeds Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica 文件:135.19 Kbytes 页数:3 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | NJSEMI | |
IRF220 | High Speed Applications DESCRIPTION • Drain Current ID=5A@ TC=25℃ • Drain Source Voltage- : VDSS= 200V(Min) • Static Drain-Source On-Resistance : RDS(on) =0.8Ω(Max) • High Speed Applications APPLICATIONS • Switching power supplies 文件:48.23 Kbytes 页数:2 Pages | ISC 无锡固电 | ISC | |
IRF220 | N-Channel Power Mosfets 文件:154.1 Kbytes 页数:5 Pages | ARTSCHIP | ARTSCHIP | |
IRF220 | SEMICONDUCTORS 文件:2.43533 Mbytes 页数:31 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | |
IRF220 | HiRel MOSFETs \n优势:; | Infineon 英飞凌 | Infineon | |
IRF220 | 4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs | Renesas 瑞萨 | Renesas | |
IRF220 | N-Channel Power MOSFETs, 7A, 150-200V | ONSEMI 安森美半导体 | ONSEMI |
技术参数
- OPN:
IRF2204PBF
- Qualification:
Non-Automotive
- Package name:
TO220
- VDS max:
40 V
- RDS (on) @10V max:
3.6 mΩ
- ID @25°C max:
210 A
- QG typ @10V:
130 nC
- Polarity:
N
- VGS(th) min:
2 V
- VGS(th) max:
4 V
- VGS(th):
3 V
- Technology:
IR MOSFET™
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
11+ |
120000 |
原装正品环保,价格合理! |
询价 | |||
IR |
25+ |
QFN |
18000 |
原厂直接发货进口原装 |
询价 | ||
IR |
24+ |
TO-3 |
10000 |
询价 | |||
IR/MOT |
24+ |
TO-3 |
1500 |
原装现货假一罚十 |
询价 | ||
IR |
2015+ |
TO-3(铁帽) |
19889 |
一级代理原装现货,特价热卖! |
询价 | ||
IR |
23+ |
TO-3 |
5000 |
原装正品,假一罚十 |
询价 | ||
siliconix |
23+ |
NA |
1182 |
专做原装正品,假一罚百! |
询价 | ||
IR |
18+ |
TO-3 |
85600 |
保证进口原装可开17%增值税发票 |
询价 | ||
IR/MOT |
专业铁帽 |
TO-3 |
1500 |
原装铁帽专营,代理渠道量大可订货 |
询价 | ||
IR/MOT |
专业铁帽 |
TO-3 |
67500 |
铁帽原装主营-可开原型号增税票 |
询价 |
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