HEXFET® Power MOSFET

® Isolated Package ® High Voitage Isolation= 2.5KVRMS ® ® Sink to Lead Creepage Dist.= 4.8mm ® Dynamic dv/dt Rating ® Low Thermal Resistance Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized dev

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IRF

Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=4.6A)

IRF1840G -> Correct Partumber IRFI840G 1. Isolated Package 2. High Voltage Isolation = 2.5VKRMS 3. Sink to Lead Creepage Dist = 4.8 mm 4. Low Thermal Resistance

文件：169.05 Kbytes 页数：6 Pages

IRF

HEXFET짰 Power MOSFET

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

文件：1.30688 Mbytes 页数：7 Pages

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS(t = 60 s,f = 60 Hz) • Sink

文件：2.81499 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=20V)

Description These N-Channel HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applicati

文件：107.28 Kbytes 页数：9 Pages

IRF

HEXFET Power MOSFET

Description These N-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applicati

文件：134.34 Kbytes 页数：9 Pages

IRF

Ultra Low On-Resistance

Description These N-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applicati

文件：139.79 Kbytes 页数：9 Pages

IRF

N-Channel Enhancement Mode Power MOSFET

Features  VDS= 20V, ID= 12 A RDS(ON)

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BYCHIP

百域芯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=182A@ TC=25℃ ·Drain Source Voltage -VDSS= 900V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 6.6mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：322.29 Kbytes 页数：2 Pages

ISC

无锡固电

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

文件：771.44 Kbytes 页数：12 Pages

IRF