首页 >IRF>规格书列表

零件编号下载 订购功能描述/丝印制造商 上传企业LOGO

IRF1840G

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES •IsolatedPackage •HighVoltageIsolation=2.5kVRMS(t=60s,f=60Hz) •Sink

VishayVishay Siliconix

威世科技威世科技半导体

IRF1902

Power MOSFET(Vdss=20V)

Description TheseN-ChannelHEXFETpowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforuseinbatteryandloadmanagementapplicati

IRF

International Rectifier

IRF1902PBF

HEXFET Power MOSFET

Description TheseN-ChannelHEXFET®powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforuseinbatteryandloadmanagementapplicati

IRF

International Rectifier

IRF1902TRPBF

Ultra Low On-Resistance

Description TheseN-ChannelHEXFET®powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforuseinbatteryandloadmanagementapplicati

IRF

International Rectifier

IRF1902TRPBF

N-Channel Enhancement Mode Power MOSFET

Features VDS=20V,ID=12A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

IRF200P222

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=182A@TC=25℃ ·DrainSourceVoltage-VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6.6mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF2084PBF

AUTOMOTIVE MOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRF

International Rectifier

IRF220

N-Channel Power MOSFETs, 7A, 150-200V

N-ChannelPowerMOSFETs7A150-200V

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRF220

4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

Intersil

Intersil Corporation

IRF220

High Speed Applications

DESCRIPTION •DrainCurrentID=5A@TC=25℃ •DrainSourceVoltage-:VDSS=200V(Min) •StaticDrain-SourceOn-Resistance:RDS(on)=0.8Ω(Max) •HighSpeedApplications APPLICATIONS •Switchingpowersupplies

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    IRF

  • 制造商:

    VISHAY

  • 制造商全称:

    Vishay Siliconix

  • 功能描述:

    Inductors Epoxy Conformal Coated Uniform Roll Coated

供应商型号品牌批号封装库存备注价格
IR
22+
263
6000
终端可免费供样,支持BOM配单
询价
IR
23+
263
8000
专注配单,只做原装进口现货
询价
IR
23+
263
8000
专注配单,只做原装进口现货
询价
IR
23+
263
7000
询价
IR
1725+
?
7500
只做原装进口,假一罚十
询价
IR-韩国产
2020+
TO-220
16402
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
IRF
24+
SOP-8P
400
现货
询价
IR
23+
NA
2860
原装正品代理渠道价格优势
询价
IRF
4000一盘
13+
0
SOP8
询价
0
询价
更多IRF供应商 更新时间2025-6-29 14:00:00