Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS(t = 60 s,f = 60 Hz) • Sink

文件：2.81499 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世科技

Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=4.6A)

IRF1840G -> Correct Partumber IRFI840G 1. Isolated Package 2. High Voltage Isolation = 2.5VKRMS 3. Sink to Lead Creepage Dist = 4.8 mm 4. Low Thermal Resistance

文件：169.05 Kbytes 页数：6 Pages

IRF

HEXFET짰 Power MOSFET

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

文件：1.30688 Mbytes 页数：7 Pages

IRF

Broadband Millimeter Mixer 6 to 40GHz

文件：61.03 Kbytes 页数：1 Pages

AAC

Low-voltage/Low-saturation Bidirectional Variable Constant-voltage Motor Driver

Overview The LB1840M is a low-voltage, low-saturation, three-input type two-channel bidirectional motor driver that permits switching between constant-voltage regulated output and saturated output. The design is ideal for a two-phase bipolar driver for stepping motors. Features • Wide operating

文件：73.46 Kbytes 页数：5 Pages

SANYO

三洋

Low-voltage/Low-saturation Bidirectional Variable Constant-voltage Motor Driver

Overview The LB1840M is a low-voltage, low-saturation, three-input type two-channel bidirectional motor driver that permits switching between constant-voltage regulated output and saturated output. The design is ideal for a two-phase bipolar driver for stepping motors. Features • Wide operating

文件：73.46 Kbytes 页数：5 Pages

SANYO

三洋