4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica

文件：68.86 Kbytes 页数：7 Pages

INTERSIL

N-Channel Power MOSFETs, 7A, 150-200V

N-Channel Power MOSFETs 7A 150-200V

文件：165.53 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

N-CHANNEL POWER MOSFETS

FEATURES • Low RDs

文件：209.79 Kbytes 页数：5 Pages

SAMSUNG

三星

4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica

文件：68.86 Kbytes 页数：7 Pages

INTERSIL

Nanosecond Switching Speeds

Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica

文件：135.19 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

HEXFET TRANSISTORS

250V 1.1 ohm HEXFET

文件：398.88 Kbytes 页数：6 Pages

IRF

HEXFET TRANSISTORS

250V 1.1 ohm HEXFET

文件：398.88 Kbytes 页数：6 Pages

IRF

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)

200 Volt, 0.40Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transis tors. The efficient geometry achieves very low on state resistance combined with high transconductance. HEXFET transistors also feature all of the well-es tablish advantag

文件：151.04 Kbytes 页数：7 Pages

IRF

N-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (Standard)

文件：212.01 Kbytes 页数：5 Pages

SAMSUNG

三星

N-Channel Power MOSFETs, 12A, 150-200 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VQS Rated at ±20 V

文件：177.14 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体