N-CHANNEL POWER MOSFETS

N-CHANNEL POWER MOSFETS

文件：211.32 Kbytes 页数：5 Pages

SAMSUNG

三星

28A, 100V, 0.077 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

文件：55.94 Kbytes 页数：7 Pages

INTERSIL

TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.077ohm, Id=28A)

The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and dio

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IRF

High Power,High Speed Applications

DESCRIPTION • Drain Current ID=27A@ TC=25℃ • Drain Source Voltage- : VDSS= 100V(Min) • Static Drain-Source On-Resistance : RDS(on) =0.085Ω(Max) • High Power,High Speed Applications APPLICATIONS • Switching power supplies

文件：48.3 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Power MOSFETs, 27 A, 60-100 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VGS Rated at ±20 V ●

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-Channel Power MOSFETs, 27 A, 60-100V

文件：146.34 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

Advanced Process Technology Ultra Low On-Resistance

Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn

文件：2.99281 Mbytes 页数：8 Pages

KERSEMI

Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A??

Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn

文件：107.46 Kbytes 页数：8 Pages

IRF

isc N-Channel Mosfet Transistor

Description Seventh Generation HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well k

文件：139.55 Kbytes 页数：2 Pages

ISC

无锡固电

Ultra Low On-Resistance

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. l Advanced Process Technology l Ultra Low On-Resistance l Dynam

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KERSEMI