N-Channel Power MOSFETs, 20 A, 60-100 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power, supplies, UPS, AC and DC motor control, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VGS Rated at ±20 V ●

文件：180.59 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

N-CHANNEL POWER MOSFETS

FEATURES ● Low RDS(on) ● Improved inductive ruggedness ● Fast switching times ● Rugged polysilicon gate cell structure ● Low input capacitance ● Extended safe operating area ● Improved high temperature reliability ● TO-3 package (Standard)

文件：211.72 Kbytes 页数：5 Pages

SAMSUNG

三星

14A, 100V, 0.160 Ohm, N-Channel Power MOSFET

14A, 100V, 0.160 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs ar

文件：56.56 Kbytes 页数：7 Pages

INTERSIL

TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.18ohm, Id=14A)

Product Summary The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior

文件：147.29 Kbytes 页数：7 Pages

IRF

High Power,High Speed Applications

DESCRIPTION • Drain Current ID=14A@ TC=25℃ • Drain Source Voltage- : VDSS= 100V(Min) • Static Drain-Source On-Resistance : RDS(on) =0.18Ω(Max) • High Power,High Speed Applications APPLICATIONS • Switching power supplies • UPS • Motor controls • High energy pulse circuits.

文件：48.16 Kbytes 页数：2 Pages

ISC

无锡固电

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS

Features: • Repetitive Avalanche Ratings • Dynamic dv/dt Rating • HermeticallySealed • Simple Drive Requirements • Ease ofParalleling

文件：106.79 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-Channel Power MOSFETs, 20 A, 60-100 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power, supplies, UPS, AC and DC motor control, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VGS Rated at ±20 V ●

文件：180.59 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A??

Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast

文件：523.539 Kbytes 页数：9 Pages

IRF

Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A??

Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast

文件：229.09 Kbytes 页数：11 Pages

IRF

Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A??

Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast

文件：229.09 Kbytes 页数：11 Pages

IRF