IRF1302技术资料参数供应代理英飞凌IRF-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
IRF1302	文件：523.539 Kbytes Page：9 Pages	Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A?? Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast 文件：523.539 Kbytes 页数：9 Pages	IRF	IRF
IRF1302	文件：300 bytes Page：1 Pages	AUTOMOTIVE MOSFET Description\nSpecifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast sw	Infineon 英飞凌	Infineon
IRF1302L	文件：229.09 Kbytes Page：11 Pages	Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A?? Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast 文件：229.09 Kbytes 页数：11 Pages	IRF	IRF
IRF1302S	文件：229.09 Kbytes Page：11 Pages	Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A?? Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast 文件：229.09 Kbytes 页数：11 Pages	IRF	IRF
IRF1302PBF	文件：165.37 Kbytes Page：10 Pages	AUTOMOTIVE MOSFET ( VDSS = 20V , RDS(on) = 4.0m廓 , ID = 180A ) 文件：165.37 Kbytes 页数：10 Pages	IRF	IRF
IRF1302L	文件：300 bytes Page：1 Pages	AUTOMOTIVE MOSFET Description\nSpecifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast sw	Infineon 英飞凌	Infineon

详细参数

型号：
IRF1302
制造商：
International Rectifier
功能描述：
MOSFET, Transistor
Polarity：
N Channel, Power Dissipation
Pd：
230W, Current Rating

供应商	型号	品牌	批号	封装	库存	备注	价格
芯有半导体（深圳）有限公司	IRF1302	IR	05+	原厂原装	551	只做全新原装真实现货供应	询价
深圳市一线半导体有限公司	IRF1302	IR	24+	TO-220AB	8866		询价
深圳市勤思达科技有限公司	IRF1302	IR	2015+	TO-220AB	12500	全新原装,现货库存长期供应	询价
深圳市华来深电子有限公司	IRF1302	IR	23+	TO-220	11846	一级代理商现货批发,原装正品,假一罚十	询价
中天科工半导体（深圳）有限公司	IRF1302	IR/VISHAY	20+	TO-220AB	36900	原装优势主营型号-可开原型号增税票	询价
深圳市安富世纪电子有限公司	IRF1302	IR/VISHAY	23+	TO-220AB	50000	全新原装正品现货,支持订货	询价
深圳市威尔健半导体有限公司	IRF1302	IR/VISHAY	23+	TO-220AB	50000	全新原装正品现货,支持订货	询价
京海半导体(深圳)有限公司	IRF1302	IR/VISHAY	25+	TO-220AB	10000	原装现货假一罚十	询价
深圳市河锋鑫科技有限公司	IRF1302	IR	2022+	TO-220AB	12888	原厂代理终端免费提供样品	询价
深圳市宏捷佳电子科技有限公司	IRF1302	IR	2023+	TO-220AB	50000	原装现货	询价

更多IRF1302供应商更新时间2026-1-17 10:32:00

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