Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A??

Description Seventh Generation HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temp

文件：306.92 Kbytes 页数：10 Pages

IRF

Ultra Low On-Resistance

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. l Advanced Process Technology l Ultra Low On-Resistance l Dynam

文件：1.19651 Mbytes 页数：10 Pages

KERSEMI

HEXFET짰 Power MOSFET

Description Seventh Generation HEXFETÆPower MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature

文件：3.89112 Mbytes 页数：10 Pages

KERSEMI

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature

文件：329.6 Kbytes 页数：12 Pages

IRF

HEXFET짰 Power MOSFET

Description Seventh Generation HEXFETÆPower MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperat

文件：279.7 Kbytes 页数：11 Pages

IRF

Advanced Process Technology

文件：279.7 Kbytes 页数：11 Pages

IRF

采用 TO-262 封装的 40V 单 N 沟道功率 MOSFET

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度;

Infineon

英飞凌