| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IRF132 | N-CHANNEL POWER MOSFETS FEATURES ●LowRDS(on) ●Improvedinductiveruggedness ●Fastswitchingtimes ●Ruggedpolysilicongatecellstructure ●Lowinputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability ●TO-3package(Standard) | SamsungSamsung semiconductor 三星三星半导体 | Samsung | |
IRF132 | N-Channel Power MOSFETs, 20 A, 60-100 V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpower,supplies,UPS,ACandDCmotorcontrol,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VGSRatedat±20V ● | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | |
IRF132 | High Power,High Speed Applications DESCRIPTION •DrainCurrentID=12A@TC=25℃ •DrainSourceVoltage-:VDSS=100V(Min) •StaticDrain-SourceOn-Resistance:RDS(on)=0.25Ω(Max) •HighPower,HighSpeedApplications APPLICATIONS •Switchingpowersupplies •UPS •Motorcontrols •Highenergypulsecircuits. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
N-Channel MOSFET Transistor •DESCRITION •reliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤1.5mΩ •Enhancementmode: •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HEXFET Power MOSFET Benefits •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheSOA •EnhancedbodydiodedV/dtanddI/dtCapability •Lead-Free Applications •HighEfficiencySynchronousRectificationinSMPS •UninterruptiblePowerSupply •HighSpeedPow | IRF International Rectifier | IRF | ||
HEXFETPower MOSFET Benefits •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheSOA •EnhancedbodydiodedV/dtanddI/dtCapability •Lead-Free Applications •HighEfficiencySynchronousRectificationinSMPS •UninterruptiblePowerSupply •HighSpeedPowe | IRF International Rectifier | IRF | ||
HEXFET Power MOSFET Benefits •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheSOA •EnhancedbodydiodedV/dtanddI/dtCapability •Lead-Free Applications •HighEfficiencySynchronousRectificationinSMPS •UninterruptiblePowerSupply •HighSpeedPow | IRF International Rectifier | IRF | ||
High Efficiency Synchronous Rectification in SMPS Benefits •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheSOA •EnhancedbodydiodedV/dtanddI/dtCapability •Lead-Free Applications •HighEfficiencySynchronousRectificationinSMPS •UninterruptiblePowerSupply •HighSpeedPow | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
HEXFET Power MOSFET Benefits •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheSOA •EnhancedbodydiodedV/dtanddI/dtCapability •Lead-Free Applications •HighEfficiencySynchronousRectificationinSMPS •UninterruptiblePowerSupply •HighSpeedPow | IRF International Rectifier | IRF | ||
High Efficiency Synchronous Rectification in SMPS Benefits •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheSOA •EnhancedbodydiodedV/dtanddI/dtCapability •Lead-Free Applications •HighEfficiencySynchronousRectificationinSMPS •UninterruptiblePowerSupply •HighSpeedPow | IRF International Rectifier | IRF |
详细参数
- 型号：
IRF132
- 制造商：
SAMSUNG
- 制造商全称：
Samsung semiconductor
- 功能描述：
N-CHANNEL POWER MOSFETS
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-3 |
10000 |
询价 | |||
INR |
23+ |
TO-3 |
5000 |
原装正品,假一罚十 |
询价 | ||
IR |
2015+ |
TO-3(铁帽) |
19889 |
一级代理原装现货,特价热卖! |
询价 | ||
FAIRCHILD |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
IR/MOT |
专业铁帽 |
TO-3 |
1500 |
原装铁帽专营,代理渠道量大可订货 |
询价 | ||
IR |
23+ |
65480 |
询价 | ||||
IR/MOT |
专业铁帽 |
TO-3 |
67500 |
铁帽原装主营-可开原型号增税票 |
询价 | ||
IRF132 |
600 |
600 |
询价 | ||||
IR |
22+ |
TO-3 |
6000 |
终端可免费供样,支持BOM配单 |
询价 | ||
IR |
23+ |
TO-3 |
48505 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
询价 |
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