Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A??

Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating tempe

文件：116.43 Kbytes 页数：9 Pages

IRF

Electric Power Steering (EPS)

Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temp

文件：3.36263 Mbytes 页数：9 Pages

KERSEMI

N-Channel MOSFET Transistor

文件：338.97 Kbytes 页数：2 Pages

ISC

无锡固电

HEXFET짰 Power MOSFET

文件：255.41 Kbytes 页数：10 Pages

IRF

采用 TO-220 封装的 55V 单 N 沟道功率 MOSFET

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度;

Infineon

英飞凌

AUTOMOTIVE MOSFET

Description Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive av

文件：3.92361 Mbytes 页数：11 Pages

KERSEMI

Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A??

Description Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive av

文件：154.79 Kbytes 页数：11 Pages

IRF

AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 5.3m廓 , ID = 131A )

Description Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive av

文件：240.27 Kbytes 页数：12 Pages

IRF

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 5.3mΩ ID = 169A Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOS

文件：207.62 Kbytes 页数：9 Pages

IRF

Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A??

Description Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive av

文件：154.79 Kbytes 页数：11 Pages

IRF