HEXFET Power MOSFET

VDSS = 40V RDS(on) = 0.009Ω ID = 100A
Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design t

文件：263.14 Kbytes 页数：10 Pages

IRF

HEXFET POWER MOSFET ( VDSS = 40V , RDS(on) = 0.009廓 , ID = 100A )

VDSS = 40V RDS(on) = 0.009Ω ID = 100A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design th

文件：190.33 Kbytes 页数：9 Pages

IRF

HEXFET Power MOSFET

VDSS = 40V RDS(on) = 0.009Ω ID = 100A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design th

文件：208.86 Kbytes 页数：10 Pages

IRF

HEXFET Power MOSFET

VDSS = 40V RDS(on) = 0.009Ω ID = 100A
Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design t

文件：263.14 Kbytes 页数：10 Pages

IRF

N-Channel Power MOSFETs, 11 A, 60-100 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. • Low RDs

文件：166.67 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

N-CHANNEL POWER MOSFETS

FEATURES • Low RDs

文件：213.26 Kbytes 页数：5 Pages

SAMSUNG

三星

8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica

文件：68.22 Kbytes 页数：7 Pages

INTERSIL

Nanosecond Switching Speeds

DESCRIPTION • Drain Current ID=8A@ TC=25℃ • Drain Source Voltage- : VDSS= 100V(Min) • Static Drain-Source On-Resistance : RDS(on) =0.3Ω(Max) • Nanosecond Switching Speeds APPLICATIONS • Switching power supplies • Motor controls,Inverters and Choppers • Audio amplifiers and high energy pul

文件：48.36 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Power MOSFETs, 11 A, 60-100 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. • Low RDs

文件：798.54 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRF120-123/IRF520-523 MTP10N08/10N10 N-Channel Power MOSFETs

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. • Low RDs

文件：798.54 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司