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型号	下载订购	功能描述	制造商上传企业	LOGO
IRF1010EZ	文件：285.31 Kbytes Page：12 Pages	AUTOMOTIVE MOSFET Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：285.31 Kbytes 页数：12 Pages	IRF	IRF
IRF1010EZ	文件：296.01 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=75A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：296.01 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
IRF1010EZL	文件：285.31 Kbytes Page：12 Pages	AUTOMOTIVE MOSFET Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：285.31 Kbytes 页数：12 Pages	IRF	IRF
IRF1010EZLPBF	文件：413.46 Kbytes Page：12 Pages	Advanced Process Technology Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：413.46 Kbytes 页数：12 Pages	IRF	IRF
IRF1010EZLPBF	文件：285.31 Kbytes Page：12 Pages	AUTOMOTIVE MOSFET Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：285.31 Kbytes 页数：12 Pages	IRF	IRF
IRF1010EZPBF	文件：285.31 Kbytes Page：12 Pages	AUTOMOTIVE MOSFET Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：285.31 Kbytes 页数：12 Pages	IRF	IRF
IRF1010EZPBF	文件：413.46 Kbytes Page：12 Pages	Advanced Process Technology Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：413.46 Kbytes 页数：12 Pages	IRF	IRF
IRF1010EZS	文件：287.5 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=75A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：287.5 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
IRF1010EZS	文件：285.31 Kbytes Page：12 Pages	AUTOMOTIVE MOSFET Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：285.31 Kbytes 页数：12 Pages	IRF	IRF
IRF1010EZSPBF	文件：285.31 Kbytes Page：12 Pages	AUTOMOTIVE MOSFET Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：285.31 Kbytes 页数：12 Pages	IRF	IRF

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技术参数

OPN：
IRF100B201
Qualification：
Non-Automotive
Package name：
TO220
VDS max：
100 V
RDS (on) @10V max：
4.2 mΩ
ID @25°C max：
192 A
QG typ @10V：
170 nC
Polarity：
N
VGS(th) min：
2 V
VGS(th) max：
4 V
VGS(th)：
3 V
Technology：
IR MOSFET™

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市河锋鑫科技有限公司	IRF	IR	22+	263	6000	终端可免费供样,支持BOM配单	询价
深圳市安富世纪电子有限公司	IRF	IR	23+	263	8000	专注配单,只做原装进口现货	询价
天津市博通航睿技术有限公司	IRF	IR	23+	263	7000		询价
深圳市海天鸿电子科技有限公司	IRF4905SPBF	IR	1725+	?	7500	只做原装进口,假一罚十	询价
深圳市盈慧通电子有限公司	IRF634B	ST	22+	原厂原封	16900	电子元器件采购降本30%!原厂直采,砍掉中间差价	询价
深圳安世裕电子科技有限公司	IRF24ER471K	Vishay	23+	TO-18	12800	原装正品代理商最优惠价格现货或订货	询价
千层芯半导体(深圳)有限公司	IRFR230BTF_FP001	Fairchi	24+	DXPAK	6000	进口原装正品假一赔十,货期7-10天	询价
深圳市恒创达实业有限公司	IRFD123	IR	17+	DIP-4	6200	100%原装正品现货	询价
深圳市卓越微芯电子有限公司	IRFB4110PBF	IR-韩国产	25+	TO-220	16402	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市信科微科技有限公司	IRF4905			TO-220	10000		询价

更多IRF供应商更新时间2026-4-21 14:00:00

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