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型号	下载订购	功能描述	制造商上传企业	LOGO
IRF1010EZ	文件：285.31 Kbytes Page：12 Pages	AUTOMOTIVE MOSFET Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：285.31 Kbytes 页数：12 Pages	IRF	IRF
IRF1010EZ	文件：296.01 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=75A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：296.01 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
IRF1010EZL	文件：285.31 Kbytes Page：12 Pages	AUTOMOTIVE MOSFET Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：285.31 Kbytes 页数：12 Pages	IRF	IRF
IRF1010EZLPBF	文件：413.46 Kbytes Page：12 Pages	Advanced Process Technology Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：413.46 Kbytes 页数：12 Pages	IRF	IRF
IRF1010EZLPBF	文件：285.31 Kbytes Page：12 Pages	AUTOMOTIVE MOSFET Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：285.31 Kbytes 页数：12 Pages	IRF	IRF
IRF1010EZPBF	文件：285.31 Kbytes Page：12 Pages	AUTOMOTIVE MOSFET Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：285.31 Kbytes 页数：12 Pages	IRF	IRF
IRF1010EZPBF	文件：413.46 Kbytes Page：12 Pages	Advanced Process Technology Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：413.46 Kbytes 页数：12 Pages	IRF	IRF
IRF1010EZS	文件：287.5 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=75A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：287.5 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
IRF1010EZS	文件：285.31 Kbytes Page：12 Pages	AUTOMOTIVE MOSFET Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：285.31 Kbytes 页数：12 Pages	IRF	IRF
IRF1010EZSPBF	文件：285.31 Kbytes Page：12 Pages	AUTOMOTIVE MOSFET Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：285.31 Kbytes 页数：12 Pages	IRF	IRF

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技术参数

OPN：
IRF100B201
Qualification：
Non-Automotive
Package name：
TO220
VDS max：
100 V
RDS (on) @10V max：
4.2 mΩ
ID @25°C max：
192 A
QG typ @10V：
170 nC
Polarity：
N
VGS(th) min：
2 V
VGS(th) max：
4 V
VGS(th)：
3 V
Technology：
IR MOSFET™

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市河锋鑫科技有限公司	IRF	IR	22+	263	6000	终端可免费供样,支持BOM配单	询价
深圳市安富世纪电子有限公司	IRF	IR	23+	263	8000	专注配单,只做原装进口现货	询价
天津市博通航睿技术有限公司	IRF	IR	23+	263	7000		询价
深圳市恒创达实业有限公司	IRFD123	IR	17+	DIP-4	6200	100%原装正品现货	询价
深圳市斌腾达科技有限公司	IRFR6215TRLPBF	INFINEON	22+	TO-252	88490	绝对真实库存原装正品	询价
深圳市卓越微芯电子有限公司	IRFB4110PBF	IR-韩国产	25+	TO-220	16402	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市福安瓯科技有限公司	IRF7103TRPBF	IOR	25+	SOP8	3000	强调现货,随时查询!	询价
深圳市赛芯源科技有限公司	IRF3207PBF	INFINEON/英飞凌	2021+	TO-220	55000	原装正品现货,诚信经营。假一罚十	询价
深圳科宇泰科技有限公司	IRFH5302DTRPBF	INFINEON	21+	标准封装	60	保证原装正品,需要联系张小姐 13544103396 微信同号	询价
深圳良洲科技有限公司	IRF3710STRRPBF	IR	两年内	NA	658	实单价格可谈	询价

更多IRF供应商更新时间2026-1-17 14:00:00

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