丝印：IRF7304；Package：SOP-8；Dual P-Channel MOSFET

Generation V Technology Ultra Low On-Resistance Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free Features
VDS (V) = -20V
RDS(ON) 140 m (VGS =-2.7V)
RDS(ON) 90m (VGS =-4.5V) The SOP-8 has been modified through a customized leadframe for enhan

文件：427.86 Kbytes 页数：8 Pages

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丝印：IRF7304；Package：SOP-8；Dual P-Channel MOSFET

Generation V Technology Ultra Low On-Resistance Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free Features
VDS (V) = -20V
RDS(ON) 140 m (VGS =-2.7V)
RDS(ON) 90m (VGS =-4.5V) The SOP-8 has been modified through a customized leadframe for enhan

文件：427.86 Kbytes 页数：8 Pages

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友台半导体

丝印：IRF7304；Package：SOP-8；Dual P-Channel MOSFET

Features Generation V Technology Ultra Low On-Resistance Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free VDS (V) = -20V RDS(ON)

文件：394.76 Kbytes 页数：8 Pages

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丝印：IRF7307；Package：SOP-8；Generation V Technology Ultra

Generation V Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Dynamic dv/dt Rating Fast Switching Lead-Free 100 Features VDS (V) = 20V RDS(ON) 53m (VGS = 4.5V) RDS(ON) 70m (VGS = 2.7V) VDS (V) = -20V RDS(ON) m (VGS = -4.5V)
RDS(ON) 140m (VGS = -2.7V) N-

文件：491.51 Kbytes 页数：9 Pages

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丝印：IRF7307；Package：SOP-8；MOSFET

Features N-Ch： VDS (V) = 20V RDS(ON)

文件：450.97 Kbytes 页数：9 Pages

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丝印：IRF7307；Package：SOP-8；Generation V Technology Ultra

Generation V Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Dynamic dv/dt Rating Fast Switching Lead-Free 100 Features VDS (V) = 20V RDS(ON) 53m (VGS = 4.5V) RDS(ON) 70m (VGS = 2.7V) VDS (V) = -20V RDS(ON) m (VGS = -4.5V)
RDS(ON) 140m (VGS = -2.7V) N-

文件：491.51 Kbytes 页数：9 Pages

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丝印：IRF7309；Package：SOP-8；Dual N P Channel MOSFET

Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques
VDS (V) = 30V
RDS(ON) 70m (VGS = 2.7V)
RDS(ON) 50m (VGS = 4.5V)
VDS (V) = -30V
RDS(ON) 100m (VGS = 4.5V)
RDS(ON) 140m (VGS = 2.7V) Features

N-Ch: P-Ch:

文件：2.30446 Mbytes 页数：11 Pages

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丝印：IRF7309；Package：SOP-8；Dual N P Channel MOSFET

Features N-Ch: VDS (V) = 30V RDS(ON)

文件：2.3004 Mbytes 页数：11 Pages

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翊欧

丝印：IRF7309；Package：SOP-8；Dual N P Channel MOSFET

Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques
VDS (V) = 30V
RDS(ON) 70m (VGS = 2.7V)
RDS(ON) 50m (VGS = 4.5V)
VDS (V) = -30V
RDS(ON) 100m (VGS = 4.5V)
RDS(ON) 140m (VGS = 2.7V) Features

N-Ch: P-Ch:

文件：2.30446 Mbytes 页数：11 Pages

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丝印：IRF7311；Package：SOP-8；30V 2N-Channel Enhancement Mode MOSFET

General Description The is the highest performance trench 2N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability a

文件：2.087889 Mbytes 页数：6 Pages

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友台半导体