| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
丝印：IRF100P218；Package：PG-TO247-3；MOSFET StrongIRFETª Features • Very low RDS(on) • Excellent gate charge x RDS(on) (FOM) • Optimized Qrr • 175°C operating temperature • Product validation according to JEDEC standard • Optimized for broadest availability from distribution partners 文件：1.14013 Mbytes 页数：11 Pages | INFINEON 英飞凌 | INFINEON | ||
MOSFET StrongIRFETª Features • Very low RDS(on) • Excellent gate charge x RDS(on) (FOM) • Optimized Qrr • 175°C operating temperature • Product validation according to JEDEC standard • Optimized for broadest availability from distribution partners 文件：1.14013 Mbytes 页数：11 Pages | INFINEON 英飞凌 | INFINEON | ||
丝印：100PW219；Package：PG-TO247-3；MOSFET StrongIRFET™ Power MOSFET, 100 V Features • Very low on‑resistance Rds(on) • Excellent gate charge x Rds(on) (FOM) • Optimized Qrr • 175°C operating temperature • Product validation according to JEDEC standard • Optimized for broadest availability from distribution partners Benefits • Reduced conduction losses • Ideal 文件：1.03327 Mbytes 页数：12 Pages | INFINEON 英飞凌 | INFINEON | ||
N-Channel Power MOSFETs, 27 A, 60-100V
文件：146.34 Kbytes 页数：5 Pages | FAIRCHILD 仙童半导体 | FAIRCHILD | ||
Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A? • Advanced Process Technology • Ultra Low On-Resistance • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex 文件：195.51 Kbytes 页数：8 Pages | IRF | IRF | ||
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?? Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr 文件：123.94 Kbytes 页数：10 Pages | IRF | IRF | ||
HEXFET Power MOSFET Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr 文件：218.72 Kbytes 页数：10 Pages | IRF | IRF | ||
HEXFET짰 Power MOSFET Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, 文件：231.86 Kbytes 页数：8 Pages | IRF | IRF | ||
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?? Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr 文件：123.94 Kbytes 页数：10 Pages | IRF | IRF | ||
HEXFET Power MOSFET Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr 文件：218.72 Kbytes 页数：10 Pages | IRF | IRF |
技术参数
- OPN：
IRF100B201
- Qualification：
Non-Automotive
- Package name：
TO220
- VDS max：
100 V
- RDS (on) @10V max：
4.2 mΩ
- ID @25°C max：
192 A
- QG typ @10V：
170 nC
- Polarity：
N
- VGS(th) min：
2 V
- VGS(th) max：
4 V
- VGS(th)：
3 V
- Technology：
IR MOSFET™
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
22+ |
263 |
6000 |
终端可免费供样,支持BOM配单 |
询价 | ||
IR |
23+ |
263 |
8000 |
专注配单,只做原装进口现货 |
询价 | ||
IR |
23+ |
263 |
7000 |
询价 | |||
IR |
1725+ |
? |
7500 |
只做原装进口,假一罚十 |
询价 | ||
ST |
22+ |
原厂原封 |
16900 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
询价 | ||
IR |
20+ |
SOP8 |
11520 |
特价全新原装公司现货 |
询价 | ||
Vishay |
23+ |
TO-18 |
12800 |
原装正品代理商最优惠价格 现货或订货 |
询价 | ||
SAMSUNG |
25+ |
TO-220 |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
询价 | ||
Infineon(英飞凌) |
2447 |
PQFN3.3X3.38L |
315000 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
IR |
23+ |
NA |
2860 |
原装正品代理渠道价格优势 |
询价 |
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