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IRF100PW219

Marking:100PW219;Package:PG-TO247-3;MOSFET StrongIRFET™ Power MOSFET, 100 V

Features •Verylowon‑resistanceRds(on) •ExcellentgatechargexRds(on)(FOM) •OptimizedQrr •175°Coperatingtemperature •ProductvalidationaccordingtoJEDECstandard •Optimizedforbroadestavailabilityfromdistributionpartners Benefits •Reducedconductionlosses •Ideal

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

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