丝印：100PW219；Package：PG-TO247-3；MOSFET StrongIRFET™ Power MOSFET, 100 V

Features • Very low on‑resistance Rds(on) • Excellent gate charge x Rds(on) (FOM) • Optimized Qrr • 175°C operating temperature • Product validation according to JEDEC standard • Optimized for broadest availability from distribution partners Benefits • Reduced conduction losses • Ideal

文件：1.03327 Mbytes 页数：12 Pages

Infineon

英飞凌

N-Channel Power MOSFET

StrongIRFET™ power MOSFETs 100 V in TO-247 long leads • Very low on‑resistanceRDS(on)\n• Excellent gate charge x R (FOM)\n• Optimized Qrr\n• 175°C operating temperature\n• Product validation according to JEDEC\n• Broad availability from disti partners\n\n优势:\n• Reduced conduction losses\n• Ideal for high switching frequency\n• Lower overshoot voltage\n;

Infineon

英飞凌

INFINEON/英飞凌
D2PAK

INFINEON/英飞凌

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IR
TO-220/TO-263

IR

国际整流器

上传：深圳市勤思达科技有限公司

INFINEON/英飞凌
TO-220

INFINEON/英飞凌

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