Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?

• Advanced Process Technology • Ultra Low On-Resistance • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex

文件：195.51 Kbytes 页数：8 Pages

IRF

N-Channel MOSFET Transistor

文件：338.48 Kbytes 页数：2 Pages

ISC

无锡固电

Ultra Low On-Resistance

文件：786.41 Kbytes 页数：8 Pages

KERSEMI

Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A??

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

文件：123.94 Kbytes 页数：10 Pages

IRF

HEXFET Power MOSFET

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

文件：218.72 Kbytes 页数：10 Pages

IRF

HEXFET짰 Power MOSFET

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

文件：231.86 Kbytes 页数：8 Pages

IRF

Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A??

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

文件：123.94 Kbytes 页数：10 Pages

IRF

HEXFET Power MOSFET

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

文件：218.72 Kbytes 页数：10 Pages

IRF

AUTOMOTIVE MOSFET

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi

文件：285.31 Kbytes 页数：12 Pages

IRF

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=75A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：296.01 Kbytes 页数：2 Pages

ISC

无锡固电