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型号	下载订购	功能描述	制造商上传企业	LOGO
IRF1010EZL	文件：285.31 Kbytes Page：12 Pages	AUTOMOTIVE MOSFET Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：285.31 Kbytes 页数：12 Pages	IRF	IRF
IRF1010EZLPBF	文件：285.31 Kbytes Page：12 Pages	AUTOMOTIVE MOSFET Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：285.31 Kbytes 页数：12 Pages	IRF	IRF
IRF1010EZLPBF	文件：413.46 Kbytes Page：12 Pages	Advanced Process Technology Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：413.46 Kbytes 页数：12 Pages	IRF	IRF
IRF1010EZPBF	文件：285.31 Kbytes Page：12 Pages	AUTOMOTIVE MOSFET Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：285.31 Kbytes 页数：12 Pages	IRF	IRF
IRF1010EZPBF	文件：413.46 Kbytes Page：12 Pages	Advanced Process Technology Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：413.46 Kbytes 页数：12 Pages	IRF	IRF
IRF1010EZS	文件：285.31 Kbytes Page：12 Pages	AUTOMOTIVE MOSFET Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：285.31 Kbytes 页数：12 Pages	IRF	IRF
IRF1010EZS	文件：287.5 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=75A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：287.5 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
IRF1010EZSPBF	文件：285.31 Kbytes Page：12 Pages	AUTOMOTIVE MOSFET Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：285.31 Kbytes 页数：12 Pages	IRF	IRF
IRF1010EZSPBF	文件：413.46 Kbytes Page：12 Pages	Advanced Process Technology Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：413.46 Kbytes 页数：12 Pages	IRF	IRF
IRF1010EZSTRLP	文件：413.46 Kbytes Page：12 Pages	Advanced Process Technology Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：413.46 Kbytes 页数：12 Pages	IRF	IRF

技术参数

OPN：
IRF1010EPBF
Qualification：
Non-Automotive
Package name：
TO220
VDS max：
60 V
RDS (on) @10V max：
12 mΩ
ID @25°C max：
84 A
QG typ @10V：
86.6 nC
Polarity：
N
VGS(th) min：
2 V
VGS(th) max：
4 V
VGS(th)：
3 V
Technology：
IR MOSFET™

供应商	型号	品牌	批号	封装	库存	备注	价格
上海市鑫鸿达电子	IRF1010E	IR	新	进口原装	3000	库存现货	询价
中天科工半导体（深圳）有限公司	IRF1010E	IR	25+	TO-220	20300	IR原装特价IRF1010E即刻询购立享优惠#长期有货	询价
深圳市河锋鑫科技有限公司	IRF1010E	IR	17+	TO-220AB	31518	原装正品可含税交易	询价
柒号芯城电子商务(深圳)有限公司	IRF1010E	IR	2024+	N/A	70000	柒号只做原装现货价秒杀全网	询价
深圳市诚利顺电子科技有限公司	IRF1010E	IR	25+	TO-220	6500	十七年专营原装现货一手货源,样品免费送	询价
深圳市勤思达科技有限公司	IRF1010E	IR	24+	TO-220/TO-263	10000	IR系列原装正品，现货供应IRF1010E,全新原装，现货热卖。	询价
深圳市联世界科技有限公司	IRF1010E	IR	24+/25+		998	原装正品现货库存价优	询价
深圳市星佑电子有限公司	IRF1010E	IR	04+	原厂原装	10000	自己公司全新库存绝对有货	询价
深圳市一线半导体有限公司	IRF1010E	IOR	24+	TO-220	35		询价
深圳市粤科源兴科技有限公司	IRF1010E	IR	13+	TO-220	7258	原装分销	询价

更多IRF1010E供应商更新时间2025-10-4 9:50:00

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