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IRF1010EZSTRLP规格书详情
描述 Description
This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
特性 Features
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free
产品属性
- 型号:
IRF1010EZSTRLP
- 功能描述:
MOSFET MOSFT 60V 84A 8.5mOhm 58nC
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Infineon |
24+ |
NA |
3000 |
进口原装正品优势供应 |
询价 | ||
IOR |
24+ |
TO263 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
询价 | ||
Infineon Technologies |
22+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原厂渠道,现货配单 |
询价 | ||
IR |
25+ |
TO263 |
32360 |
IR全新特价IRF1010EZSTRLP即刻询购立享优惠#长期有货 |
询价 | ||
Infineon(英飞凌) |
23+ |
D2PAK |
10000 |
只做全新原装,实单来 |
询价 | ||
IR |
23+ |
TO-263 |
47025 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
询价 | ||
IOR |
14+ |
TO263 |
1490 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
Infineon/英飞凌 |
2023+ |
TO-263-2 |
6000 |
原装正品现货、支持第三方检验、终端BOM表可配单提供 |
询价 | ||
Infineon/英飞凌 |
24+ |
TO-263-2 |
8000 |
只做原装,欢迎询价,量大价优 |
询价 | ||
NK/南科功率 |
2025+ |
TO-263-2 |
986966 |
国产 |
询价 |