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IRF1010EZSTRLP规格书详情
描述 Description
This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
特性 Features
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free
产品属性
- 型号：
IRF1010EZSTRLP
- 功能描述：
MOSFET MOSFT 60V 84A 8.5mOhm 58nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
INFINEON/英飞凌 |
2450+ |
TO-263 |
9850 |
只做原装正品现货或订货假一赔十! |
询价 | ||
Infineon Technologies |
22+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原厂渠道,现货配单 |
询价 | ||
IR |
25+ |
TO-263 |
860000 |
明嘉莱只做原装正品现货 |
询价 | ||
Infineon |
23+ |
MOSFET |
5864 |
原装原标原盒 给价就出 全网最低 |
询价 | ||
Infineon/英飞凌 |
24+ |
TO-263-2 |
25000 |
原装正品,假一赔十! |
询价 | ||
Infineon(英飞凌) |
24+ |
TO-263-3 |
8357 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
IR |
25+23+ |
TO263 |
74131 |
绝对原装正品现货,全新深圳原装进口现货 |
询价 | ||
IR |
21+ |
TO-263 |
10000 |
原装现货假一罚十 |
询价 | ||
Infineon |
22+ |
NA |
4800 |
加我QQ或微信咨询更多详细信息, |
询价 |
