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IRF1010EZSTRLP中文资料IRF数据手册PDF规格书
IRF1010EZSTRLP规格书详情
Description
This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free
产品属性
- 型号：
IRF1010EZSTRLP
- 功能描述：
MOSFET MOSFT 60V 84A 8.5mOhm 58nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
2021+ |
45000 |
十年专营原装现货,假一赔十 |
询价 | |||
Infineon/英飞凌 |
24+ |
TO-263-2 |
25000 |
原装正品,假一赔十! |
询价 | ||
INFINEON |
24+ |
TO-263 |
60000 |
原装正品进口现货 |
询价 | ||
Infineon(英飞凌) |
23+ |
N/A |
12000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
Infineon/英飞凌 |
24+ |
TO-263-2 |
6000 |
全新原装深圳仓库现货有单必成 |
询价 | ||
Infineon(英飞凌) |
23+ |
NA |
7000 |
工厂现货!原装正品! |
询价 | ||
IR |
21+ |
TO-263 |
10000 |
原装现货假一罚十 |
询价 | ||
IR |
25+23+ |
TO263 |
74131 |
绝对原装正品现货,全新深圳原装进口现货 |
询价 | ||
IR |
2018+ |
TO263 |
6528 |
只做原装正品假一赔十!只要网上有上百分百有库存放心 |
询价 | ||
INFINEON/英飞凌 |
24+ |
NA/ |
5600 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 |
