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IRF1010EPBF中文资料IRF数据手册PDF规格书
IRF1010EPBF规格书详情
描述 Description
Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
产品属性
- 型号：
IRF1010EPBF
- 功能描述：
MOSFET MOSFT 60V 81A 12mOhm 86.6nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
24+ |
TO-220 |
12000 |
原装正品 假一罚十 |
询价 | ||
INFINEON/英飞凌 |
24+ |
TO-220-3 |
8750 |
只做原装/假一赔十/安心咨询 |
询价 | ||
VISHAY |
24+ |
TO-220 |
12000 |
VISHAY专营进口原装现货假一赔十 |
询价 | ||
IR |
NEW |
TO-220AB |
18689 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
询价 | ||
IR |
23+ |
TO-220-3 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
INF |
24+ |
SMD |
1000 |
全新正品现货供应特价库存 |
询价 | ||
INFINEON/英飞凌 |
24+ |
TO-220 |
88000 |
只做现货 |
询价 | ||
IR |
2450+ |
TO220 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
三年内 |
1983 |
只做原装正品 |
询价 | ||||
Infineon |
1931+ |
N/A |
1512 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 |
