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IRF1010EZPBF中文资料IRF数据手册PDF规格书
IRF1010EZPBF规格书详情
Description
This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free
产品属性
- 型号：
IRF1010EZPBF
- 功能描述：
MOSFET MOSFT 60V 84A 8.5mOhm 58nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
11+ |
TO-220 |
50 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
IR |
21+ |
TO220 |
1568 |
10年芯程,只做原装正品现货,欢迎加微信垂询! |
询价 | ||
Infineon Technologies |
24+ |
TO-220AB |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 | ||
INFINEON/英飞凌 |
22+ |
TO-220-3 |
10000 |
原装现货 |
询价 | ||
INFINEON/IR |
NA |
16355 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
INFINEON/英飞凌 |
21+ |
TO-220 |
5590 |
只做原装正品假一赔十!正规渠道订货! |
询价 | ||
IR |
10+ |
TO-220 |
14280 |
询价 | |||
INFINEON |
24+ |
TO220 |
5000 |
全新原装正品,现货销售 |
询价 | ||
23+ |
TO-220 |
48470 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
询价 | |||
IR |
24+ |
TO-220 |
990000 |
明嘉莱只做原装正品现货 |
询价 |
