HEXFET Power MOSFET

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

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Advanced Process Technology

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HEXFET짰 Power MOSFET

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

文件：231.86 Kbytes 页数：8 Pages

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Advanced Process Technology Ultra Low On-Resistance

文件：3.12153 Mbytes 页数：8 Pages

KERSEMI

Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A??

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

文件：123.94 Kbytes 页数：10 Pages

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