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IRF1018EPBF

HEXFET Power MOSFET

Benefits ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche SOA ● Enhanced body diode dV/dt and dI/dt Capability Applications ● High Efficiency Synchronous Rectification in SMPS ● Uninterruptible Power Supply ● High Speed Power Switching

文件:429.6 Kbytes 页数:11 Pages

IRF

IRF1018EPBF

High Efficiency Synchronous Rectification in SMPS

文件:435.45 Kbytes 页数:11 Pages

IRF

IRF1018EPBF_15

High Efficiency Synchronous Rectification in SMPS

文件:435.45 Kbytes 页数:11 Pages

IRF

IRF1018ES

Isc N-Channel MOSFET Transistor

文件:299.96 Kbytes 页数:2 Pages

ISC

无锡固电

IRF1018ESLPBF

HEXFET Power MOSFET

Benefits ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche SOA ● Enhanced body diode dV/dt and dI/dt Capability Applications ● High Efficiency Synchronous Rectification in SMPS ● Uninterruptible Power Supply ● High Speed Power Switching

文件:429.6 Kbytes 页数:11 Pages

IRF

IRF1018ESLPBF

High Efficiency Synchronous Rectification in SMPS

文件:435.45 Kbytes 页数:11 Pages

IRF

详细参数

  • 型号:

    IRF1018EPBF

  • 功能描述:

    MOSFET MOSFT 60V 79A 8.4mOhm 46nC Qg

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR
24+
TO-220
20540
保证进口原装现货假一赔十
询价
IR
25+
TO-220
9600
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
IR
24+
TO-220AB
10000
只做原装欢迎含税交易,假一赔十,放心购买
询价
INFINEON/英飞凌
25+
TO-220
32360
INFINEON/英飞凌全新特价IRF1018EPBF即刻询购立享优惠#长期有货
询价
IR
23+
TO-220
65400
询价
Infineon
25+
SMD
918000
明嘉莱只做原装正品现货
询价
IR
17+
TO-220AB
31518
原装正品 可含税交易
询价
INFINEON/英飞凌
2021+
TO-220
9000
原装现货,随时欢迎询价
询价
Infineon(英飞凌)
24+
TO-220AB
20743
原厂可订货,技术支持,直接渠道。可签保供合同
询价
IR
25+
TO-220
22000
原装现货假一罚十
询价
更多IRF1018EPBF供应商 更新时间2025-12-9 10:20:00