HEXFET Power MOSFET

Benefits ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche SOA ● Enhanced body diode dV/dt and dI/dt Capability Applications ● High Efficiency Synchronous Rectification in SMPS ● Uninterruptible Power Supply ● High Speed Power Switching

文件：429.6 Kbytes 页数：11 Pages

IRF

High Efficiency Synchronous Rectification in SMPS

文件：435.45 Kbytes 页数：11 Pages

IRF

High Efficiency Synchronous Rectification in SMPS

文件：435.45 Kbytes 页数：11 Pages

IRF

Power Manager Gallium Arsenide Power Rectifier

Power Manager Gallium Arsenide Power Rectifier . . . ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: • Planar Epitaxial Construction • Nitride Passivation for Stable Blocking C

文件：151.93 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

Power Manager Gallium Arsenide Power Rectifier

Power Manager Gallium Arsenide Power Rectifier . . . ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: • Planar Epitaxial Construction • Nitride Passivation for Stable Blocking C

文件：153.95 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

N-channel TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a surface mounting plastic package using ’trench’ technology. FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low-profile surface mount package • Logic level compatible A

文件：88.84 Kbytes 页数：7 Pages

PHI

PHI