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IRF130

N-Channel Power MOSFETs, 20 A, 60-100 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power, supplies, UPS, AC and DC motor control, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VGS Rated at ±20 V ●

文件:180.59 Kbytes 页数:6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRF130

N-CHANNEL POWER MOSFETS

FEATURES ● Low RDS(on) ● Improved inductive ruggedness ● Fast switching times ● Rugged polysilicon gate cell structure ● Low input capacitance ● Extended safe operating area ● Improved high temperature reliability ● TO-3 package (Standard)

文件:211.72 Kbytes 页数:5 Pages

Samsung

三星

IRF130

14A, 100V, 0.160 Ohm, N-Channel Power MOSFET

14A, 100V, 0.160 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs ar

文件:56.56 Kbytes 页数:7 Pages

Intersil

IRF130

High Power,High Speed Applications

DESCRIPTION • Drain Current ID=14A@ TC=25℃ • Drain Source Voltage- : VDSS= 100V(Min) • Static Drain-Source On-Resistance : RDS(on) =0.18Ω(Max) • High Power,High Speed Applications APPLICATIONS • Switching power supplies • UPS • Motor controls • High energy pulse circuits.

文件:48.16 Kbytes 页数:2 Pages

ISC

无锡固电

IRF130

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS

Features: • Repetitive Avalanche Ratings • Dynamic dv/dt Rating • HermeticallySealed • Simple Drive Requirements • Ease ofParalleling

文件:106.79 Kbytes 页数:3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRF130

TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.18ohm, Id=14A)

Product Summary The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior

文件:147.29 Kbytes 页数:7 Pages

IRF

IRF130

SEMICONDUCTORS

文件:2.43533 Mbytes 页数:31 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

IRF130

N-CHANNEL POWER MOSFET

文件:22.11 Kbytes 页数:2 Pages

SEME-LAB

Seme LAB

IRF130

HiRel MOSFETs

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Infineon

英飞凌

IRF130

N-Channel Power MOSFETs, 20 A, 60-100 V

ONSEMI

安森美半导体

详细参数

  • 型号:

    IRF130

  • 制造商:

    International Rectifier

  • 功能描述:

    Trans MOSFET N-CH 100V 14A 3-Pin(2+Tab) TO-3

  • 功能描述:

    TRANS MOSFET N-CH 100V 14A 2PIN TO-204AA - Bulk

  • 功能描述:

    N CH MOSFET 100V 14A TO-204AA

  • 功能描述:

    N CH MOSFET, 100V, 14A, TO-204AA

  • 功能描述:

    N CH MOSFET, 100V, 14A, TO-204AA; Transistor

  • Polarity:

    N Channel; Continuous Drain Current

  • Id:

    14A; Drain Source Voltage

  • Vds:

    100V; On Resistance

  • Rds(on):

    180mohm; Rds(on) Test Voltage

  • Vgs:

    10V; Threshold Voltage Vgs

  • Typ:

    4V; No. of

  • Pins:

    2;RoHS

  • Compliant:

    No

供应商型号品牌批号封装库存备注价格
IR
最新
1000
原装正品现货
询价
IR
25+
原厂封装
10280
原厂授权一级代理,专注军工、汽车、医疗、工业、新能源、电力!
询价
IR
23+
TO-3
3200
绝对全新原装!优势供货渠道!特价!请放心订购!
询价
F
06+
原厂原装
4287
只做全新原装真实现货供应
询价
IR
24+
TO-3
10000
询价
IR
25+
QFN
18000
原厂直接发货进口原装
询价
IR
25+
TO-3
4650
询价
IR/MOT
24+
TO-3
1500
原装现货假一罚十
询价
IR
23+
TO-3
5000
原装正品,假一罚十
询价
IR
2015+
TO-3(铁帽)
19889
一级代理原装现货,特价热卖!
询价
更多IRF130供应商 更新时间2025-10-5 15:01:00