型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
IRF130 | N-Channel Power MOSFETs, 20 A, 60-100 V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power, supplies, UPS, AC and DC motor control, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VGS Rated at ±20 V ● 文件:180.59 Kbytes 页数:6 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | |
IRF130 | N-CHANNEL POWER MOSFETS FEATURES ● Low RDS(on) ● Improved inductive ruggedness ● Fast switching times ● Rugged polysilicon gate cell structure ● Low input capacitance ● Extended safe operating area ● Improved high temperature reliability ● TO-3 package (Standard) 文件:211.72 Kbytes 页数:5 Pages | Samsung 三星 | Samsung | |
IRF130 | 14A, 100V, 0.160 Ohm, N-Channel Power MOSFET 14A, 100V, 0.160 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs ar 文件:56.56 Kbytes 页数:7 Pages | Intersil | Intersil | |
IRF130 | High Power,High Speed Applications DESCRIPTION • Drain Current ID=14A@ TC=25℃ • Drain Source Voltage- : VDSS= 100V(Min) • Static Drain-Source On-Resistance : RDS(on) =0.18Ω(Max) • High Power,High Speed Applications APPLICATIONS • Switching power supplies • UPS • Motor controls • High energy pulse circuits. 文件:48.16 Kbytes 页数:2 Pages | ISC 无锡固电 | ISC | |
IRF130 | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS Features: • Repetitive Avalanche Ratings • Dynamic dv/dt Rating • HermeticallySealed • Simple Drive Requirements • Ease ofParalleling 文件:106.79 Kbytes 页数:3 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | NJSEMI | |
IRF130 | TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.18ohm, Id=14A) Product Summary The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior 文件:147.29 Kbytes 页数:7 Pages | IRF | IRF | |
IRF130 | SEMICONDUCTORS 文件:2.43533 Mbytes 页数:31 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | |
IRF130 | N-CHANNEL POWER MOSFET 文件:22.11 Kbytes 页数:2 Pages | SEME-LAB Seme LAB | SEME-LAB | |
IRF130 | HiRel MOSFETs \n优势:; | Infineon 英飞凌 | Infineon | |
IRF130 | N-Channel Power MOSFETs, 20 A, 60-100 V | ONSEMI 安森美半导体 | ONSEMI |
详细参数
- 型号:
IRF130
- 制造商:
International Rectifier
- 功能描述:
Trans MOSFET N-CH 100V 14A 3-Pin(2+Tab) TO-3
- 功能描述:
TRANS MOSFET N-CH 100V 14A 2PIN TO-204AA - Bulk
- 功能描述:
N CH MOSFET 100V 14A TO-204AA
- 功能描述:
N CH MOSFET, 100V, 14A, TO-204AA
- 功能描述:
N CH MOSFET, 100V, 14A, TO-204AA; Transistor
- Polarity:
N Channel; Continuous Drain Current
- Id:
14A; Drain Source Voltage
- Vds:
100V; On Resistance
- Rds(on):
180mohm; Rds(on) Test Voltage
- Vgs:
10V; Threshold Voltage Vgs
- Typ:
4V; No. of
- Pins:
2;RoHS
- Compliant:
No
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
最新 |
1000 |
原装正品现货 |
询价 | |||
IR |
25+ |
原厂封装 |
10280 |
原厂授权一级代理,专注军工、汽车、医疗、工业、新能源、电力! |
询价 | ||
IR |
23+ |
TO-3 |
3200 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
询价 | ||
F |
06+ |
原厂原装 |
4287 |
只做全新原装真实现货供应 |
询价 | ||
IR |
24+ |
TO-3 |
10000 |
询价 | |||
IR |
25+ |
QFN |
18000 |
原厂直接发货进口原装 |
询价 | ||
IR |
25+ |
TO-3 |
4650 |
询价 | |||
IR/MOT |
24+ |
TO-3 |
1500 |
原装现货假一罚十 |
询价 | ||
IR |
23+ |
TO-3 |
5000 |
原装正品,假一罚十 |
询价 | ||
IR |
2015+ |
TO-3(铁帽) |
19889 |
一级代理原装现货,特价热卖! |
询价 |
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