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IRF1104L

HEXFET Power MOSFET

VDSS=40V RDS(on)=0.009Ω ID=100A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignth

IRF

International Rectifier

IRF1104LPBF

HEXFET Power MOSFET

VDSS=40V RDS(on)=0.009Ω ID=100A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignt

IRF

International Rectifier

IRF1104PBF

HEXFETPOWERMOSFET(VDSS=40V,RDS(on)=0.009廓,ID=100A)

VDSS=40V RDS(on)=0.009Ω ID=100A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignth

IRF

International Rectifier

IRF1104PBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF1104S

HEXFETPowerMOSFET

VDSS=40V RDS(on)=0.009Ω ID=100A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignth

IRF

International Rectifier

IRF1104SPBF

HEXFETPowerMOSFET

VDSS=40V RDS(on)=0.009Ω ID=100A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignt

IRF

International Rectifier

IRL1104

HEXFETPowerMOSFET

VDSS=40V RDS(on)=0.008Ω ID=104A… Description FifthGenerationHEXFET®powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandrugged

IRF

International Rectifier

IRL1104L

Logic-LevelGateDrive

VDSS=40V RDS(on)=0.008Ω ID=104A… Description FifthGenerationHEXFET®powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandrugged

IRF

International Rectifier

IRL1104LPBF

HEXFETPowerMOSFET

VDSS=40V RDS(on)=0.008Ω ID=104A… Description FifthGenerationHEXFET®powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandrugged

IRF

International Rectifier

IRL1104PBF

Logic-LevelGateDrive

VDSS=40V RDS(on)=0.008Ω ID=104A… Description FifthGenerationHEXFET®powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandrugged

IRF

International Rectifier

详细参数

  • 型号:

    IRF1104L

  • 功能描述:

    MOSFET N-CH 40V 100A TO-262

  • RoHS:

  • 类别:

    分离式半导体产品 >> FET - 单

  • 系列:

    HEXFET®

  • 标准包装:

    1,000

  • 系列:

    MESH OVERLAY™ FET

  • 型:

    MOSFET N 通道,金属氧化物 FET

  • 特点:

    逻辑电平门

  • 漏极至源极电压(Vdss):

    200V 电流 - 连续漏极(Id) @ 25°

  • C:

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C:

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大):

    4V @ 250µA 闸电荷(Qg) @

  • Vgs:

    72nC @ 10V 输入电容(Ciss) @

  • Vds:

    1560pF @ 25V 功率 -

  • 最大:

    40W

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-220-3 整包

  • 供应商设备封装:

    TO-220FP

  • 包装:

    管件

供应商型号品牌批号封装库存备注价格
IR
24+
TO-262
501141
免费送样原盒原包现货一手渠道联系
询价
IR
24+
TO-262
8866
询价
IR
2015+
TO-262
12500
全新原装,现货库存长期供应
询价
IR
23+
TO-262
7600
全新原装现货
询价
IR
23+
TO-262
35890
询价
IRF
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
IR
23+
TO-262-3
11846
一级代理商现货批发,原装正品,假一罚十
询价
INFINE0N
21+
I2PAK (TO-262)
32568
100%进口原装!长期供应!绝对优势价格(诚信经营
询价
INFINEON
1503+
TO-262
3000
就找我吧!--邀您体验愉快问购元件!
询价
Infineon
22+
NA
2118
加我QQ或微信咨询更多详细信息,
询价
更多IRF1104L供应商 更新时间2025-7-16 17:06:00