HEXFET Power MOSFET

VDSS = 40V RDS(on) = 0.009Ω ID = 100A
Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design t

文件：263.14 Kbytes 页数：10 Pages

IRF

HEXFET POWER MOSFET ( VDSS = 40V , RDS(on) = 0.009廓 , ID = 100A )

VDSS = 40V RDS(on) = 0.009Ω ID = 100A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design th

文件：190.33 Kbytes 页数：9 Pages

IRF

Advanced Process Technology

文件：191.29 Kbytes 页数：9 Pages

IRF

HEXFET Power MOSFET

VDSS = 40V RDS(on) = 0.009Ω ID = 100A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design th

文件：208.86 Kbytes 页数：10 Pages

IRF