首页 >IRF1104LPBF>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IRF1104LPBF | HEXFET Power MOSFET VDSS=40V RDS(on)=0.009Ω ID=100A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignt | IRF International Rectifier | IRF | |
HEXFETPOWERMOSFET(VDSS=40V,RDS(on)=0.009廓,ID=100A) VDSS=40V RDS(on)=0.009Ω ID=100A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignth | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET VDSS=40V RDS(on)=0.009Ω ID=100A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignth | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET VDSS=40V RDS(on)=0.009Ω ID=100A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignt | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET VDSS=40V RDS(on)=0.008Ω ID=104A Description FifthGenerationHEXFET®powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandrugged | IRF International Rectifier | IRF | ||
Logic-LevelGateDrive VDSS=40V RDS(on)=0.008Ω ID=104A Description FifthGenerationHEXFET®powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandrugged | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET VDSS=40V RDS(on)=0.008Ω ID=104A Description FifthGenerationHEXFET®powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandrugged | IRF International Rectifier | IRF | ||
Logic-LevelGateDrive VDSS=40V RDS(on)=0.008Ω ID=104A Description FifthGenerationHEXFET®powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandrugged | IRF International Rectifier | IRF | ||
AdvancedProcessTechnologyLogic-LevelGateDrive VDSS=40V RDS(on)=0.008Ω ID=104A Description FifthGenerationHEXFET®powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandrugged | IRF International Rectifier | IRF |
详细参数
- 型号：
IRF1104LPBF
- 制造商：
International Rectifier
- 功能描述：
MOSFET, 40V, 100A, 9 MOHM, 62 NC QG, TO-262
- 功能描述：
TRANS MOSFET N-CH 40V 100A 3PIN TO-262 - Rail/Tube
- 功能描述：
MOSFET N-Channel 40V 100A TO262
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-262 |
231 |
只做原厂渠道 可追溯货源 |
询价 | ||
IR |
24+ |
TO-262-3 |
621 |
询价 | |||
IRF |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
International Rectifier |
2022+ |
1 |
全新原装 货期两周 |
询价 | |||
IR |
23+ |
TO-262 |
30000 |
代理全新原装现货,价格优势 |
询价 | ||
IR |
11+PBF |
TO-262 |
231 |
普通 |
询价 | ||
IR |
21+ |
TO-262 |
10000 |
原装现货假一罚十 |
询价 | ||
IR |
2022+ |
TO-262 |
1800 |
原厂代理 终端免费提供样品 |
询价 | ||
IR |
23+ |
TO-262 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
IR |
10+ |
TO-262 |
220 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 |
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