Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：96.76 Kbytes 页数：8 Pages

IRF

N-Channel MOSFET Transistor

• DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.036Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：338.58 Kbytes 页数：2 Pages

ISC

无锡固电

Advanced Process Technology

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inter

文件：1.16562 Mbytes 页数：10 Pages

KERSEMI

Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：156.84 Kbytes 页数：10 Pages

IRF

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：725.79 Kbytes 页数：11 Pages

IRF

Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：156.84 Kbytes 页数：10 Pages

IRF

Fully Avalanche Rated

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inter

文件：1.06153 Mbytes 页数：10 Pages

KERSEMI

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：725.79 Kbytes 页数：11 Pages

IRF

Isc N-Channel MOSFET Transistor

文件：300.57 Kbytes 页数：2 Pages

ISC

无锡固电

ADVANCED PROCESS TECHNOLOGY

文件：599.79 Kbytes 页数：9 Pages

IRF