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IRF1310NLPBF

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件:725.79 Kbytes 页数:11 Pages

IRF

IRF1310NLPBF

HEXFET Power MOSFET

Infineon

英飞凌

IRF1310NPBF

HEXFET POWER MOSFET

文件:592.94 Kbytes 页数:8 Pages

IRF

IRF1310NPBF

ADVANCED PROCESS TECHNOLOGY

文件:599.79 Kbytes 页数:9 Pages

IRF

IRF1310NS

Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件:156.84 Kbytes 页数:10 Pages

IRF

详细参数

  • 型号:

    IRF1310NLPBF

  • 制造商:

    International Rectifier

  • 功能描述:

    MOSFET, 100V, 42A, 36 MOHM, 73.3 NC QG, TO-262

  • 功能描述:

    Trans MOSFET N-CH 100V 42A 3-Pin(3+Tab) TO-262

  • 功能描述:

    TRANS MOSFET N-CH 100V 42A 3PIN TO-262 - Rail/Tube

  • 功能描述:

    MOSFET N-Channel 100V 42A TO262

供应商型号品牌批号封装库存备注价格
IR
24+
TO-262
27
只做原厂渠道 可追溯货源
询价
IR
24+
TO-262-3
574
询价
International Rectifier
2022+
1
全新原装 货期两周
询价
IR
11+PBF
TO-262
27
优势
询价
IR
2022+
TO-262
27
原厂代理 终端免费提供样品
询价
IR
11+
TO-262
27
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
IR
23+
TO-262
8000
只做原装现货
询价
IR
23+
TO-262
7000
询价
IR
05+
原产原装
2000
全新原装 绝对有货
询价
IR
17+
TO-220
6200
100%原装正品现货
询价
更多IRF1310NLPBF供应商 更新时间2025-10-4 16:36:00