| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IRF120 | N-CHANNEL POWER MOSFETS FEATURES • Low RDs 文件:213.26 Kbytes 页数:5 Pages | SAMSUNG 三星 | SAMSUNG | |
IRF120 | 8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica 文件:68.22 Kbytes 页数:7 Pages | INTERSIL | INTERSIL | |
IRF120 | Nanosecond Switching Speeds DESCRIPTION • Drain Current ID=8A@ TC=25℃ • Drain Source Voltage- : VDSS= 100V(Min) • Static Drain-Source On-Resistance : RDS(on) =0.3Ω(Max) • Nanosecond Switching Speeds APPLICATIONS • Switching power supplies • Motor controls,Inverters and Choppers • Audio amplifiers and high energy pul 文件:48.36 Kbytes 页数:2 Pages | ISC 无锡固电 | ISC | |
IRF120 | N-Channel Power MOSFETs, 11 A, 60-100 V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. • Low RDs 文件:798.54 Kbytes 页数:3 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | NJSEMI | |
IRF120 | IRF120-123/IRF520-523 MTP10N08/10N10 N-Channel Power MOSFETs Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. • Low RDs 文件:798.54 Kbytes 页数:3 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | NJSEMI | |
IRF120 | N-Channel Power MOSFETs, 11 A, 60-100 V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. • Low RDs 文件:798.54 Kbytes 页数:3 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | NJSEMI | |
IRF120 | N-Channel Power MOSFETs, 11 A, 60-100 V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. • Low RDs 文件:166.67 Kbytes 页数:5 Pages | FAIRCHILD 仙童半导体 | FAIRCHILD | |
IRF120 | N-Channel Power Mosfets, 文件:338.75 Kbytes 页数:5 Pages | ARTSCHIP | ARTSCHIP | |
IRF120 | N-CHANNEL POWER MOSFETS | ONSEMI 安森美半导体 | ONSEMI | |
N-Channel Power MOSFETs, 11 A, 60-100 V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. • Low RDs 文件:166.67 Kbytes 页数:5 Pages | FAIRCHILD 仙童半导体 | FAIRCHILD |
详细参数
- 型号:
IRF120
- 制造商:
Rochester Electronics LLC
- 功能描述:
- Bulk
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
2015+ |
TO-3(铁帽) |
19889 |
一级代理原装现货,特价热卖! |
询价 | ||
IR |
24+ |
TO-3 |
10000 |
询价 | |||
IR |
1415+ |
TO-252 |
28500 |
全新原装正品,优势热卖 |
询价 | ||
IR/MOT |
24+ |
TO-3 |
1500 |
原装现货假一罚十 |
询价 | ||
IR |
23+ |
TO-3 |
5000 |
原装正品,假一罚十 |
询价 | ||
IR |
23+ |
原厂封装 |
9888 |
专做原装正品,假一罚百! |
询价 | ||
IR/MOT |
专业铁帽 |
TO-3 |
1500 |
原装铁帽专营,代理渠道量大可订货 |
询价 | ||
HAR |
23+ |
65480 |
询价 | ||||
IR/MOT |
专业铁帽 |
TO-3 |
67500 |
铁帽原装主营-可开原型号增税票 |
询价 | ||
IRF120 |
25+ |
270 |
270 |
询价 |
相关规格书
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相关库存
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- IRF1405PBF
- IRF1405SHR
- IRF1405STRLHR
- IRF1405STRR
- IRF1405STRRPBF
- IRF1405ZHR
- IRF1405ZL-7PPBF
- IRF1405ZPBF
- IRF1405ZS-7P
- IRF1405ZSHR

