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IRF123

N-Channel Power MOSFETs, 11 A, 60-100 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. • Low RDs

文件:166.67 Kbytes 页数:5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRF123

N-CHANNEL POWER MOSFETS

FEATURES • Low RDs

文件:213.26 Kbytes 页数:5 Pages

Samsung

三星

IRF123

8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica

文件:68.22 Kbytes 页数:7 Pages

Intersil

IRF123

IRF120-123/IRF520-523 MTP10N08/10N10 N-Channel Power MOSFETs

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. • Low RDs

文件:798.54 Kbytes 页数:3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRF123

N-Channel Power MOSFETs, 11 A, 60-100 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. • Low RDs

文件:798.54 Kbytes 页数:3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRF123

N-Channel Power MOSFETs, 11 A, 60-100 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. • Low RDs

文件:798.54 Kbytes 页数:3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRF123

N-Channel Power Mosfets,

文件:338.75 Kbytes 页数:5 Pages

ARTSCHIP

IRF123

Nanosecond Switching Speeds

文件:48.39 Kbytes 页数:2 Pages

ISC

无锡固电

IRF123

Trans MOSFET N-CH 80V 8A 3-Pin(2+Tab) TO-3

NJS

技术参数

  • Maximum Power Dissipation:

    60000mW

  • Maximum Drain Source Voltage:

    80V

  • Maximum Continuous Drain Current:

    8A

  • Configuration:

    Single

  • Channel Type:

    N

  • Category:

    Power MOSFET

供应商型号品牌批号封装库存备注价格
Infineon(英飞凌)
24+
TO-204
7793
支持大陆交货,美金交易。原装现货库存。
询价
IR
24+
TO-3
10000
询价
IR
2015+
TO-3(铁帽)
19889
一级代理原装现货,特价热卖!
询价
IR/MOT
专业铁帽
TO-3
1500
原装铁帽专营,代理渠道量大可订货
询价
IR/MOT
专业铁帽
TO-3
67500
铁帽原装主营-可开原型号增税票
询价
三星
23+
50000
全新原装正品现货,支持订货
询价
三星
2000
11
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
IR
22+
TO-3
6000
终端可免费供样,支持BOM配单
询价
三星
23+
铁帽
12800
##公司主营品牌长期供应100%原装现货可含税提供技术
询价
IR
23+
TO-3
7000
询价
更多IRF123供应商 更新时间2025-10-7 16:12:00