IRF1010EZ资料使用说明书贸易商无锡固电IRF-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
IRF1010EZ	文件：285.31 Kbytes Page：12 Pages	AUTOMOTIVE MOSFET Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：285.31 Kbytes 页数：12 Pages	IRF	IRF
IRF1010EZ	文件：296.01 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=75A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：296.01 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
IRF1010EZ	文件：338.8 Kbytes Page：2 Pages	N-Channel MOSFET Transistor 文件：338.8 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
IRF1010EZL	文件：285.31 Kbytes Page：12 Pages	AUTOMOTIVE MOSFET Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：285.31 Kbytes 页数：12 Pages	IRF	IRF
IRF1010EZLPBF	文件：285.31 Kbytes Page：12 Pages	AUTOMOTIVE MOSFET Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：285.31 Kbytes 页数：12 Pages	IRF	IRF
IRF1010EZLPBF	文件：413.46 Kbytes Page：12 Pages	Advanced Process Technology Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：413.46 Kbytes 页数：12 Pages	IRF	IRF
IRF1010EZPBF	文件：285.31 Kbytes Page：12 Pages	AUTOMOTIVE MOSFET Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：285.31 Kbytes 页数：12 Pages	IRF	IRF
IRF1010EZPBF	文件：413.46 Kbytes Page：12 Pages	Advanced Process Technology Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：413.46 Kbytes 页数：12 Pages	IRF	IRF
IRF1010EZS	文件：285.31 Kbytes Page：12 Pages	AUTOMOTIVE MOSFET Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：285.31 Kbytes 页数：12 Pages	IRF	IRF
IRF1010EZS	文件：287.5 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=75A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：287.5 Kbytes 页数：2 Pages	ISC 无锡固电	ISC

技术参数

OPN：
IRF1010EZPBF
Qualification：
Non-Automotive
Package name：
TO220
VDS max：
60 V
RDS (on) @10V max：
8.5 mΩ
ID @25°C max：
84 A
QG typ @10V：
58 nC
Polarity：
N
VGS(th) min：
2 V
VGS(th) max：
4 V
VGS(th)：
3 V
Technology：
IR MOSFET™

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市河锋鑫科技有限公司	IRF1010EZ	IR	17+	TO-220AB	31518	原装正品可含税交易	询价
深圳市勤思达科技有限公司	IRF1010EZ	IR	24+	N/A	8000	全新原装正品,现货销售	询价
柒号芯城电子商务(深圳)有限公司	IRF1010EZ	IR	2024+	N/A	70000	柒号只做原装现货价秒杀全网	询价
深圳市粤科源兴科技有限公司	IRF1010EZ	IR	13+	TO-220	59374	原装分销	询价
深圳市一线半导体有限公司	IRF1010EZ	IR	24+	TO-220AB	8866		询价
谛辉(北京/上海/青岛 )电子科技有限公司	IRF1010EZ	IR	25+	QFN	18000	原厂直接发货进口原装	询价
齐创科技(上海,北京,青岛)有限公司	IRF1010EZ	IR	23+	TO-220AB	5000	原装正品,假一罚十	询价
深圳市华来深电子有限公司	IRF1010EZ	IR	23+	TO-220-3	11846	一级代理商现货批发,原装正品,假一罚十	询价
深圳市华斯顿科技有限公司	IRF1010EZ	IOR	25+23+	TO-220	37912	绝对原装正品现货,全新深圳原装进口现货	询价
深圳市赛芯源科技有限公司	IRF1010EZ	IR	18+	TO-220	41200	原装正品,现货特价	询价

更多IRF1010EZ供应商更新时间2025-10-8 14:00:00

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