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IRF1010EZSPBF

AUTOMOTIVE MOSFET

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi

文件:285.31 Kbytes 页数:12 Pages

IRF

IRF1010EZSPBF

Advanced Process Technology

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi

文件:413.46 Kbytes 页数:12 Pages

IRF

IRF1010EZSTRLP

Advanced Process Technology

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi

文件:413.46 Kbytes 页数:12 Pages

IRF

IRF1010EZPBF

Advanced Process Technology

文件:413.46 Kbytes 页数:12 Pages

IRF

IRF1010EZPBF_15

Advanced Process Technology

文件:413.46 Kbytes 页数:12 Pages

IRF

IRF1010EZS

Isc N-Channel MOSFET Transistor

文件:299.58 Kbytes 页数:2 Pages

ISC

无锡固电

IRF1010EZ

60V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装

\n优势:\n• Optimized for broadest availability from distribution partners\n• Product qualification according to JEDEC standard\n• Optimized for 10V gate-drive voltage (called Normal level)\n• Industry standard through-hole power package\n• High-current carrying capability package (upto 195A, die-size ;

Infineon

英飞凌

IRF1010EZS

60V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装

\n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 快速开关\n• 175°C 的工作温度;

Infineon

英飞凌

IRF1010EZLPBF

Advanced Process Technology

Infineon

英飞凌

技术参数

  • OPN:

    IRF1010EZPBF

  • Qualification:

    Non-Automotive

  • Package name:

    TO220

  • VDS max:

    60 V

  • RDS (on) @10V max:

    8.5 mΩ

  • ID @25°C max:

    84 A

  • QG typ @10V:

    58 nC

  • Polarity:

    N

  • VGS(th) min:

    2 V

  • VGS(th) max:

    4 V

  • VGS(th):

    3 V

  • Technology:

    IR MOSFET™

供应商型号品牌批号封装库存备注价格
IR
17+
TO-220AB
31518
原装正品 可含税交易
询价
IR
24+
N/A
8000
全新原装正品,现货销售
询价
IR
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
IR
13+
TO-220
59374
原装分销
询价
IR
24+
TO-220AB
8866
询价
IR
25+
QFN
18000
原厂直接发货进口原装
询价
IR
23+
TO-220AB
5000
原装正品,假一罚十
询价
IR
23+
TO-220-3
11846
一级代理商现货批发,原装正品,假一罚十
询价
IOR
25+23+
TO-220
37912
绝对原装正品现货,全新深圳原装进口现货
询价
IR
18+
TO-220
41200
原装正品,现货特价
询价
更多IRF1010EZ供应商 更新时间2025-10-9 14:00:00