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IRF1010NPBF

HEXFET Power MOSFET

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRF

International Rectifier

IRF1010NPBF

Advanced Process Technology Ultra Low On-Resistance

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1010NPBF

Advanced Process Technology

IRF

International Rectifier

IRF1010NPBF_15

Advanced Process Technology

IRF

International Rectifier

IRF1010NS

PowerMOSFET(Vdss=55V,Rds(on)=11mohm,Id=85A??

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF1010NS

FullyAvalancheRated

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleonresistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1010NS

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF1010NSPBF

HEXFET짰PowerMOSFET

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF1010NSPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF1010NSPBF

AdvancedProcessTechnology

IRF

International Rectifier

详细参数

  • 型号:

    IRF1010NPBF

  • 功能描述:

    MOSFET MOSFT 55V 72A 11mOhm 80nC

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
INFINEON/IR
1907+
NA
600
20年老字号,原装优势长期供货
询价
INFINEON/英飞凌
25+
TO-220
20300
INFINEON/英飞凌原装特价IRF1010NPBF即刻询购立享优惠#长期有货
询价
IR
15+
原厂原装
8700
进口原装现货假一赔十
询价
IR
23+
TO-220
65400
询价
IR
24+
TO-220
151
只做原厂渠道 可追溯货源
询价
Infineon(英飞凌)
24+
TO-220
7828
支持大陆交货,美金交易。原装现货库存。
询价
IR
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
INFINEON/英飞凌
10+14+P
TO-220
9
原装进口无铅现货
询价
IR
07+
原厂原装
20000
自己公司全新库存绝对有货
询价
IR
23+
TO-220
9896
询价
更多IRF1010NPBF供应商 更新时间2025-7-12 19:20:00